Cree (Durham, NC) has released two new unmatched 50 V gallium nitride (GaN) high electron mobility transistors (HEMTs) ideal for use in high power broadband amplifier, CW, and pulsed applications. The new 30 W CGHV40030 and 100 W CGHV40100 significantly improve the efficiency and bandwidth capabilities of multi-octave to instantaneous bandwidth amplifiers and a wide range of L- and S-Band products. Further, both the 30 W and 100 W 50 V GaN transistors are available in a two-leaded flange or pill package. The HEMTs exhibit:

  • High efficiency.
  • High gain.
  • Wide bandwidth.
  • High power density.
  • Low parasitics.
  • High current gain cutoff frequency (FT).

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