As high data rate applications put more strain on LTE wireless networks, innovative solutions such as small cell base stations (BTS) and carrier aggregation will be needed to bridge the bandwidth gap in high traffic areas. In response to broader bandwidth demand, Cree, Inc. (Durham, NC) introduces a family of GaN HEMT RF transistors that delivers industry-leading bandwidth and high efficiency performance to support today’s busy LTE networks. Built on plastic dual-flat no-leads (DFN) surface mount packages, the new Cree GaN HEMT RF transistors also provide the affordability needed to replace less efficient Si or GaAs transistors in these applications.
- Frequency-agile transistors are capable of operating at a range between 700 MHz to 3.8 GHz instantaneous, and may be optimized for band splits.
- 50 percent drain efficiency at 10W average power under a LTE 7.5dB peak-to-average ratio signal.
- Covers 2.5-2.7 GHz instantaneous RF bandwidth while offering 16dB of linear gain.
For more information, visit www.cree.com.