GaN Systems Inc. (Ottawa, Ontario) has announced five new normally-off 650 V GaN transistors optimised for high speed system design.
The new 650 V enhancement mode parts feature a reverse current capability, zero reverse recovery charge and source-sense for optimal high speed design. RoHS compliant, the devices are delivered in GaN Systems’ near chipscale, embedded GaNPX package which eliminates wire bonds thereby minimising inductance. This package also optimises thermal performance and is extremely compact.
Girvan Patterson, President of GaN Systems comments: "With these new 650 V parts as well as our recently-announced 100 V family, GaN Systems offers a very wide range of parts which are available for are sampling now. Applications include high speed DC-DC converters, resonant converters, AC motor drives, inverters, battery chargers, and switched mode power supplies.”
- GS66502P: 8.5 A / 165 mΩ.
- GS66504P: 17 A / 82 mΩ.
- GS66506P: 25 A / 55 mΩ.
- GS66508P: 34 A / 41 mΩ.
- GS43106L: 30 A / 60 mΩ cascode.
For more information visit gansystems.com.