GaN Systems Inc. (Ottawa, Ontario) has announced a family of normally-off 100 V GaN transistors that spans 20-80 A with very low on resistance.
The new enhancement mode parts feature a reverse current capability, source-sense for optimal high speed design, and low Total Gate Charge (QG) and Reverse Recovery Charge (QRR). RoHS compliant, the devices are delivered in GaN Systems’ near chipscale, embedded GaNPX package which minimises inductance and optimises thermal performance.
- GS61002P: 20 A / 21 mΩ.
- GS61004P: 40 A / 11 mΩ.
- GS61006P: 60 A / 8 mΩ.
- GS61008P: 80 A / 5 mΩ.
- GS71008P: 80 A / 5 mΩ half bridge device.
For more information visit gansystems.com.