MACOM (Lowell, MA) has introduced a new GaN on SiC HEMT power transistor for L-Band pulsed radar and communication applications, the MAGX-001214-500L00. The MAGX-001214-500L00:

  • Provides 500 W of output power with 19 dB of gain and 55% efficiency. 
  • Features high breakdown voltages, which allows for operation at 50 V under more extreme load mismatch conditions.
  • Features an operation range from 1,200 to 1,400 MHz Frequency range.
  • Has mean time to failure of 5.3*106hours.
  • Is available as both flanged and flangeless packaged devices.

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