Richardson RFPD (LaFox, IL) introduced a new 50V gallium nitride on silicon carbide (GaN on SiC) RF power high-electron-mobility transistor (HEMT) from Microsemi Corporation (Microsemi). The 0912GN-650V is internally-matched and capable of providing over 17 dB gain, 650 Watts of pulsed RF output power at 128μs pulse width and 10% duty factor across the 960 to 1215 MHz band. Features include:

  • Frequency range: 960-1215 MHz
  • Gain: 17 dB (minimum), 18 dB (typical)
  • Pout: 650W
  • Test signal: Pulse width 128μs, duty cycle 10%
  • Drain efficiency: 60%
  • VSWR-T: 3:1
  • Thermal resistance: 0.155 ºC/W
  • Package type: 55KR

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