Advanced Power Electronics (San Jose, CA) has launched a new P-channel Enhancement-mode Power MOSFET, the AP2325GEU6-HF-3, which is well-suited for use in applications such as load switches.

Features of the AP2325GEU6-HF-3:

  • Fast switching.
  • Low on-resistance.
  • Cost-effective.
  • Simple to use.
  • Low gate charge.
  • Minimum Drain-Source Breakdown Voltage (BVDSS) of -20 V.
  • Maximum RDS(ON) of 145 m Ω.
  • Maximum Continuous Drain Current (ID) at 25° C of -1.8 A.

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