MACOM (Lowell, MA) recently announced the newest entry in its portfolio of GaN in Plastic packaged power products. Optimized for L-Band commercial air traffic control, military radar, and long range perimeter monitoring applications at 1.2 to 1.4 GHz, MACOM’s new 2-stage, fully matched GaN in Plastic power module scales to peak pulse power levels of 100 W in a 14 x 24 mm package size – delivering twice the power of comparably sized competing products.

MACOM’s new high gain GaN in Plastic power modules are GaN-based modules supporting surface mount technology (SMT) assembly, providing significant cost and process advantages compared to ceramic-packaged flange-mount components. Delivering benefits in size, weight, and power (SWaP) while enabling high volume manufacturing efficiency, MACOM’s new GaN power modules extend the performance attributes of its discrete GaN in Plastic power transistors and establish new standards for GaN module integration.

Under pulsed conditions, these modules deliver output power greater than 90 W, with 30 dB typical associated power gain and 58% typical power added efficiency. Supporting 50 V operation and up to 3 ms pulse width/duration for improved time on target, MACOM’s GaN in Plastic power modules reduce overall power consumption and cooling requirements compared to existing options. 

The module features:

  • Land Grid Array (LGA) pattern for enhanced thermal flow and “True SMT” assembly.
  • Inputs and outputs formed on the back, with edge castellations for ease of assembly inspection. Flexible design allowing for gate and/or drain pulsing.
  • Gate voltage sense port for use in temperature compensation or pulse droop compensation. Calculated mean-time-to-failure (MTTF) at 200⁰ C is approximately 600 years.

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