RFMW announces design and sales support for the T1G6001032-SM, a ceramic packaged, 10W peak (P3dB) power transistor fabricated using TriQuint Semiconductor’s proven Gallium Nitride (GaN) production process. Offering a broad instantaneous bandwidth afforded from TriQuint’s TQGaN25 process technology, the T1G6001032-SM:
- Is rated from DC to 6GHz.
- Offers >17dB mid-band linear gain with over 50% efficiency.
- Operates at 32V with only 50mA of quiescent drain current, finding applications in commercial and military radar, communication transceivers, avionics, and wideband amplifier designs.
- Comes packaged in a ceramic, 5x5mm QFN for minimal thermal resistance and ease of use.
For more information please visit rfmw.com