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RFMW, Ltd. (San Jose, CA) announces a discrete 400-Micron GaAs pHEMT FET. Designed using TriQuint’s proven 0.25 um pHEMT process, power, and efficiency at high-drain bias operating conditions are optimized. The TriQuint TGF2040:

  • Supports circuit designs to 20 GHz with up to 26 dBm P1dB.
  • Features a gain up to 13 dB and 55% power-added efficiency.
  • Allows self-biasing and eliminates the need for a negative supply voltage.

For more information visit www.rfmw.com.

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