RFMW, Ltd. (San Jose, CA) announces a discrete 400-Micron GaAs pHEMT FET. Designed using TriQuint’s proven 0.25 um pHEMT process, power, and efficiency at high-drain bias operating conditions are optimized. The TriQuint TGF2040:
- Supports circuit designs to 20 GHz with up to 26 dBm P1dB.
- Features a gain up to 13 dB and 55% power-added efficiency.
- Allows self-biasing and eliminates the need for a negative supply voltage.
For more information visit www.rfmw.com.