Richardson Electronics recently announced that Freescale Semiconductor has introduced the first 50V, 600W LDMOS power transistor that continues to deliver its full rated gain and output power even after withstanding a load mismatch of 65:1 VSWR. This unrivaled ruggedness capability supports harsh RF circuit environments in highly mismatched applications such as CO2 laser exciters, plasma generators, and MRI power amplifiers.

The MRFE6VP5600 is also well-suited to be used in defense/aerospace amplifiers (pulsed operation or CW), HF/VHF radio amplifiers, RF plastic welding amplifiers, particle accelerator amplifiers, and various other industrial, medical and broadcast amplifiers. This high-gain LDMOS transistor operates over the frequency range from 1.8 to 600 MHz.

Important features of the MRFE6VP5600H/HS include:

* Typical Gain of 24.6dB allows for fewer amplifier stages.

* Provides over 75% Drain Efficiency (?D).

* Characterized with Series Equivalent Large-Signal Impedance Parameters.

* Device can be used Single-Ended or in a Push-Pull configuration.

* Available in both bolt-down and solder-down ceramic packaging.

* Low Thermal Resistance.

A quick demonstration video is available (Lab Demo - High Rugged Test) regarding the enhanced ruggedness at 65:1 load VSWR for this family of LDMOS high-powered transistors from Freescale Semiconductor.

Reference designs for the MRFE6VP5600, datasheets, and the product itself are available from Richardson Electronics. Please call 1-800-737-6937 (North America); or find your local sales engineer worldwide at

======================================================================== Please let us know when this release runs in any of your fine publications (print or electronic).  Again, we thank you very much for helping us to introduce these new products. Best regards, Bill Murphy Technical Marketing Manager, Marketing Operations | RF, Wireless & Power Division Richardson Electronics | work 630-208-3688 |