TriQuint Semiconductor, Inc. has released a new state-of-the-art gallium nitride (GaN) power amplifier with high power and efficiency for defense and commercial communications. The new device and TriQuint's other GaN, GaAs, SAW and BAW products are being exhibited at the annual Military Communications Conference (MILCOM), San Jose, CA (USA), October 31 to November 3. The TGA2572 delivers 20W for Ku-band (14 to 16 GHz) defense and commercial communications systems. The new device is fabricated using TriQuint's production-released GaN on SiC process; it typically offers 30% PAE and 24dBm of small signal gain. Offered in die and packaged forms, TGA2572 samples will be available in early 2011. Contact product marketing for details. TriQuint's expertise in gallium nitride (GaN), gallium arsenide / high-voltage GaAs pHEMT, surface acoustic and bulk acoustic wave (SAW / BAW), low-cost packaged devices and monolithic microwave integrated circuits (MMICs) has made us a leading supplier of RF system components to Boeing Company, Lockheed Martin Corporation, Northrop Grumman, Raytheon and other major defense contractors. TriQuint supplies RF innovation for consumer retail products including mobile devices, wireless LAN, triple-play CATV systems, optical and wireless infrastructure applications.