International Rectifier recently introduced a family of HEXFET® power MOSFETs including the IRFH6200TRPbF that delivers the industry?s lowest on-state resistance (RDS(on)), according to the company. The power MOSFETs featuring IR?s latest silicon technology are the company?s first devices available in a 5 x 6 mm PQFN package with optimized copper clip and solder die. The IRFH6200TRPbF 20V device delivers an industry leading RDS(on) of 1.2 mOhm (max.) at 4.5V Vgs to significantly cut conduction losses for DC motor drive applications such as hand tools. The 25V IRFH5250TRPbF and 30V IRFH53xxTRPbF devices are designed for DC switch applications such as active ORing and DC motor drive applications requiring high current carrying capability and high efficiency. The IRFH5250TRPbF features ultra low RDS(on) of 1.15 mOhm (max.) combined with just 52 nC gate charge (Qg) while the IRFH5300TRPbF delivers RDS(on) of only 1.4 mOhm (max.) combined with 50 nC Qg.