Cree, Inc. announces the sample release of 2 120 W GaN HEMT microwave transistors for telecommunication applications, such as W-CDMA, LTE and WiMAX. Due to the combination of high RF power density, low capacitance and high thermal conductivity silicon carbide (SiC) substrates, these transistors are said to provide ultimate performance compared to other technologies, such as GaAs MESFET or Si LDMOSFET. Two demonstration amplifiers, 1 for each device, are available for transistor evaluation. These transistors provide convenient values of input and output impedances to allow device matching over >30% instantaneous bandwidths. The CGH21120F can be used primarily in the 1,800 to 2,300 MHz frequency range, while the CGH25120F is optimized for the 2,300 to 2,700 MHz range.