HVVi Semiconductors, Inc. announces its Model HVV0405-175 power transistor, using the high voltage vertical field effect transistor architecture for radar applications in the UHF band. Operating across the 420 to 470 MHz band, the device offers UHF system designers a fully qualified 175 W RF power transistor with optimal gain and ruggedness specifications. The Model HVV0912-150 power transistor is used for distance measuring equipment (DME) applications. Operating across a 960 to 1,215 MHz band, this transistor works in ground-based DME systems that require a wider bandwidth than earlier announced units for airborne DME applications. These two devices allow designers to build high density, high impedance systems in easy-to-match 50 V components.