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Cree's CGH21120F and CGH25120F GaN HEMT microwave transistors perform in telecommunication applications, such as W-CDMA, LTE and WiMAX. The components consist of single, input-pre-matched GaN HEMT devices providing >120 W of saturated power in industry-standard ceramic-metal packages. The CGH21120F is designed for frequencies from 1,800 to 2,300 MHz, while the CGH25120F is optimized for frequencies from 2,300 to 2,700 MHz. The units complement Cree’s RoHS-compliant HEMT microwave transistors for WiMAX applications available for 802.11x OFDM average power levels of 2, 4 and 8 W.
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