STMicroelectronics increases the ruggedness, switching performance and efficiency of power MOSFETs for lighting ballasts where they are used in the PFC and half bridge sections, as well as in switching power supplies. The use of proprietary SuperMESH3 technology with lower on-resistance guarantees that higher efficiency is obtained. Additionally, due to their optimal dv/dt performance and higher breakdown-voltage margin, these devices provide enhanced reliability and safety. The first devices introduced are the 620 V STx6N62K3, which will be followed by the 620 V STx3N62K3, as well as the 525 V STx7N52K3 and STx6N52K3. The savings in on-resistance enabled by SuperMESH3 reduce RDSON in DPAK packages to 1.28 ? in the STD6N62K3 and 0.98 ? in the STD7N52K3, boosting operating efficiency in applications such as low-energy lamp ballasts.