X-FAB Semiconductor Foundries announces 650 V smart power technology based on a trench-isolated SOI process. The technology is suitable for any type of power net application up to 230 V. This technology is a modular process combining DMOS, bipolar, and 1-micron CMOS processing steps with dielectric insulation. This approach enables the integration of a wide variety of MOS and bipolar devices with different voltage levels. In addition to predefined 650 and 350 V n-channel DMOS transistors with different on-resistances, CMOS transistors are available with voltage levels from 5 to 20 V. Complex CMOS logic also can be integrated, based on 1-micron design rules.
X-FAB Semiconductor Foundries AG