The RF3800 series of GaAs HBT drive power amplifiers, comprised of the RF3800, RF3802 and RF3805, provides a rugged, low-cost platform design for highly linear amplifier requirements. These multi-band platform devices offer an efficient, cost-effective alternative to higher-power (> 10 W P1dB) flange-mount SiLDMOS transistors. Developed for cellular base station infrastructure platforms ranging from 450 MHz to 2200 MHz, the RF3800 series offers high breakdown voltage, enabling an 8-volt collector bias. The amplifiers also incorporate both base and emitter ballasting to prevent thermal runaway at the 8 volt bias level. The amplifiers are assembled in a thermally enhanced Aluminum Nitride (AlN) L-CC-8 package.
RF Micro Devices