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UltraRF unveiled its PFM21020 RF Power Amplifier Module that is designed with the company's UltraGOLDII™ LDMOS technology for infrastructure level performance. The PFM21020 represents the first in a planned range of high-power 50 ohm amplifier modules designed specifically to meet the stringent linearity requirement of 3G wireless infrastructure systems.

Rated at 20 watts P1 dB output power, the PFM21020 has 80MHz bandwidth, a critical parameter for high-speed modulation types. Designed for operation under harsh environmental conditions, the module maintains a gain flatness better than 0.25 dB vs. frequency for a baseplate temperature range of -10°C to +90°C. The unit is highly linear, with typical two-tone intermodulation products of -40 dBc at 10 watts peak envelope power.

The PFM21020 comprises a single 5 watt LDMOS amplifier stage, operated in class A, driving a quadrature combined pair of 10 watt devices operated in class AB. The use of a quadrature combined architecture yields a design that has exceptional bandwidth and a closely controlled output return loss better than -20 dB, a critical parameter for interfacing the module to such impedance-sensitive components as filters and power combiners. When compared to a conventional single-ended amplifier stage, the quadrature output stage architecture can provide as much as 20 dB of reverse isolation, which in many systems can potentially eliminate the need for costly double junction isolators.

The PFM21020 uses a 96 percent Alumina substrate to maximize manufacturing repeatability, long-term stability and reliability. The LDMOS transistor die is fabricated using UltraGOLDII technology with all-gold metal system and all gold interconnect to maximize reliability. The module is suitable for mounting with industry standard RF interfaces (without connectors) and can be operated safely at altitudes to 15,000 feet. No external matching components are required to meet the specified performance, and all critical DC bias components are integral to the module.

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