The MAX2648 is designed on a proprietary low noise, advanced silicon germanium (SiGe) process optimized for high-frequency applications. The LNA's 17 dB gain and 1.8 dB noise figure compare favorably to the performance offered by more expensive GaAs ICs, which typically have 12 dB to 15 dB of gain and a 2.5 dB noise figure.
Compared to discrete designs, the MAX2648's integrated active bias network saves one transistor and three passive components, while maintaining stable RF performance over supply and temperature variations. The LNA is packaged in the small 2 × 3 UCSP (ultra chip scale package) measuring 1.0 mm × 1.5 mm. Total board space required is 11 mm2. A fully assembled evaluation kit (MAX2648EVKIT) is available to help reduce design time.