The first devices to be released on the HaRP-enhanced UltraCMOS process are the PE42672 SP7T and the PE42660 SP6T RF switches, designed for quad-band GSM and GSM/WCDMA handset applications.
Since the mid-1990s, integration, standardization and modularization have provided the GSM handset industry a roadmap of reduced size, increased performance and reduced cost. Competing solutions revealed strengths in the different process technologies: GaAs and pin diodes emerged dominant in the front-end module. However, the advent of the WCDMA platform introduced complexities that have stumped module and IC manufacturers alike. Competing for the same slots are various options based on multiple technologies. Forced together and promoted as "integrated," these solutions introduce "stacked margin" costs and invite second-sourcing dilemmas. Further, technical issues surrounding Intermodulation Distortion (IMD) and the antenna switching function leave handset manufacturers continuing their search for a result that meets 3GPP specifications.
To solve these problems, Peregrine Semiconductor Corporation introduces the next generation of its UltraCMOS process technology, incorporating HaRP technology. These enhancements enable improvements in harmonic results, linearity and overall RF performance specifications required by the 3GPP standards body for GSM/WCDMA applications. In particular, advances in IMD are now available to multi-band front-end module and handset manufacturers alike, enabling long-term roadmaps for the design of IMD spec-compliant multi-band, multi-platform mobile communications. The first devices to be released on the HaRP-enhanced UltraCMOS process are the PE42672 SP7T and the PE42660 SP6T RF switches, designed for quad-band GSM and GSM/WCDMA handset applications.
PE42672 a monolithic SP7T switch with an on-board CMOS decoder. This highly integrated solution simplifies and lowers the cost of RF designs by reducing overall part count by as many as 6 devices and 13 wire bonds. Both devices deliver exceptional linearity (PE42672: 2fo 85 dBc and 3fo 79 dBc; PE42660: 2fo 88 dBc and 3fo 85 dBc); IP3 better than +70 dBm; 1.5 KV ESD tolerance; 2.75 V operating voltage and ultra-low power consumption. The PE42660 switch is drop-in compatible with the PE4263 GSM handset switch.
The PE42672 and PE42660 also deliver the following performances (respectively): Tx/Rx isolation of 44 dB/48 dB at 900 MHz and 38 dB/40 dB at 1900 MHz; P1dB compression point of +41 dBm; and 0.5 dB of insertion loss at 900 MHz. On-chip CMOS decode logic facilitates both 1.8 V and 2.75 V 3-pin CMOS control inputs, while no blocking capacitors and on-chip SAW filter over-voltage protection devices ensure ease-of-integration.