Mimix Broadband, Inc. introduces a GaAs MMIC distributed amplifier that can be used as an ultra wideband amplifier or a fiber optic modulator driver. Using 0.15 micron gate length GaAs pHEMT device model technology, this distributed amplifier covers the 0.05 to 50 GHz frequency bands. The device has a small signal gain of 9 dB with noise figure of 5 dB across the band. It also includes 15 dB gain control and +9 dBm output referred P1dB compression point. This amplifier, identified as XD1002, is suited for microwave, millimeter-wave, wideband military and fiber optic applications. The IIP3 for this device ranges from +5 to +11 dBm as the gain is varied from below 5 dB (minimum gain 5 to 8 dB) to above +9 dB (maximum gain +9 to +11 dB). Psat for this device is greater than +17 dBm. Mimix performs 100% on-wafer RF, DC and output power testing on the XD1002, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.
Mimix Broadband, Inc.