austriamicrosystems announces its 0.35 μm RF CMOS process. The CMOS base technology has been adapted for RF applications with analog/mixed-signal features from austriamicrosystems' 0.35μm silicon germanium BiCMOS process. The process features high performance transistors and a comprehensive suite of passive components characterized and tuned for RF applications. The modular integration of linear resistors, thick metal four spiral inductors, and linear capacitors using Metal Insulator Metal technology (MIM) makes the process suited for a range of RF applications.
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