Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this up-converter, identified as XU1001, covers the 36 to 40 GHz frequency bands. The XU1001 has a typical small signal gain of 4 dB with a 35 dB typical LO/RF isolation. This device is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications.
Mimix performs 100% on-wafer RF, DC and output power testing on the XU1001, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.