Micron is the first memory manufacturer to produce a 32 Mbit read-while-write Burst/Page Flash device operating at 1.5V. This device (MT28F322D15FH) is specifically designed for mobile phones, meeting the performance and low power needs of next generation mobile phone platforms.
Offering dual-bank architecture, Micron's 32 Mbit Burst/Page flash device allows for simultaneous read-while-write operation. It operates with nominal supply voltage of 1.5 V ± five-percent (1.425 V minimum and 1.575 V maximum), with an extended input/output voltage range of 1.65 V to 1.95 V, thus allowing a direct interface with other devices in the system unable to operate at a lower voltage. This 32 Mbit device is organized as a 2 Mbit × 16 and is manufactured on Micron's 0.18-micron process technology. Other features include an asynchronous access time of 100 nanoseconds (ns), a page access time of 30 ns and a 25 ns burst rate when used in burst mode; a 58-ball (MT28F322D15FH) FBGA package with 0.75 pitch; an extended temperature range; and a one-time-programmable (OTP) area to accommodate security codes.