Fabricated on a proprietary PowerSense process technology that improves die density and increases power efficiencies to minimize chip power consumption, the CS1112 integrates four protected DMOS low-side drivers controlled either through a Serial Peripheral Interface (SPI) port or its associated parallel input.
Whereas standard bipolar processes require constant DC bias currents to activate circuit functionality, PowerSense circuits dissipate power only during active output switching. The CS1112 features a sleep mode (VDD < 0.5V), where it draws 2 microamperes of bias current and guaranteed maximum quiescent current is 5 milli amperes when any or all four drivers are operational.
While the CS1112 efficiently drives standard resistive/inductive loads common to high-speed instrumentation, the device is best used to redesign, upgrade or retrofit systems using multi-driver solutions in automotive applications. The extended industrial operating temperature range is 40 degrees Celsius to 125 degrees Celsius.
The differentiating features of the CS1112 are I/O control and output protection features that include overcurrent protection, open load detection, and inductive flyback clamps. Operation will latch off in the event of overvoltage ( 35V typical) or undervoltage ( 4.5V typical) conditions.
The CS1112 is in a 24 lead SOIC plastic package with internally fused leads.