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RF Micro Devices announced it will showcase a broad selection of high-power, wide-bandwidth products, in addition to gallium nitride (GaN), gallium arsenide (GaAs) and molecular beam epitaxial (MBE) foundry services, targeting wireless communications markets at MILCOM 2011 in Baltimore.

RFMD's industry-leading portfolio of high-power, wide bandwidth products and foundry services target multiple communications end-markets, including military communications, private mobile radio, and point-to-point microwave radio. During MILCOM 2011, RFMD will display a variety of revolutionary GaN-based products, such as high-power unmatched power transistors, broadband power ICs, and broadband power transistors. The Company will also showcase its broad portfolio of point-to-point radio products, including up/down converters and MMIC VCOs, as well as other products addressing the RF and IF functions of point-to-point transceivers.

RFMD will be exhibiting at MILCOM 2011 from November 7, 2011, until November 10, 2011, at the Baltimore Convention Center, in Baltimore, MD, in Booth 700.

For more information, please visit RFMD's web site at www.rfmd.com.




Posted by Janine E. Mooney, Editor

November 4, 2011 

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