Extensive Range of LDMOS Transistors from STMicroelectronics

June 18, 2012 6:32 am | Product Releases | Comments

Family of Plastic-Packaged RF Power Transistors Ideally Suited for Portable and Fixed Wireless Communications Applications. Richardson RFPD, Inc. today announces immediate availability and full design support capabilities for an extensive range of laterally diffused metal oxide semiconductor (LDMOS) transistors from STMicroelectronics (ST).

LISTED UNDER: Semiconductors, Transistors

Dual Ideal Diode Controller Replaces Two Schottky Diodes to Provide Efficient Power Supply ORing & Supply Holdup in High Power Applications

June 18, 2012 5:34 am | Product Releases | Comments

Linear Technology introduces the LTC4353, a 0V to 18V dual ideal diode controller that replaces two high power Schottky diodes, enabling low loss ORing of multiple power sources with minimal disturbance to supply voltages.The LTC4353 regulates the forward voltage drop across external N-channel MOSFETs to ensure smooth current transfer between supplies in diode-OR applications.

LISTED UNDER: Semiconductors, Diodes

New Gallium Nitride (GaN) RF MMIC Process Technologies to Enable Lower Cost, Higher Performance Telecommunication and Radar Systems

June 18, 2012 5:22 am | Wireless Design & Development | Product Releases | Comments

Higher Power GaN-on-SiC Processes Allow Telecom System Operators and Military System Providers to Leverage GaN Efficiency for Operational Cost Savings. Cree, Inc.announces the qualification and production release of two new GaN processes: G40V4, a 0.25µm process with operating drain voltage up to 40V, and G50V3, a 0.

LISTED UNDER: Semiconductors, MMIC | Telecommunications | Radar

Miniature 0402 Varactor Diodes

April 30, 2012 5:53 am | Product Releases | Comments

Skyworks introduces three miniature 0402 varactor diodes for VCO, phase noise and voltage tuned filter applications.  The SMV1247-040LF, SMV1248-040LF and SMV1263-040LF provide small form factor, discrete solutions for a variety of phase and frequency control uses.  These miniature, low profile, plastic surface mount technology (SMT) diodes have reduced footprints in industry-standard packages.

LISTED UNDER: Semiconductors, Diodes

Ka-Band LNA MMIC Offers 1.7 dB Noise Figure and Low-Power Dissipation

April 16, 2012 8:13 am | Product Releases | Comments

Custom MMIC ( ), a developer of performance driven monolithic microwave integrated circuits (MMICs), is offering a new device from its growing MMIC design library. The CMD162 is a GaAs MMIC low-noise amplifier (LNA) chip for applications from 26 to 34 GHz. Optimized for 30 GHz satellite communications, the CMD162 boasts a typical noise figure of 1.

LISTED UNDER: Semiconductors, MMIC

Simultaneous Dual-band 2.4GHz 802.11n/BT4.0 + 5GHz MIMO 802.11ac Convergence SoC

April 16, 2012 5:00 am | Product Releases | Comments

Redpine Signals announced the release of the industry’s first simultaneous dual-band 5GHz MIMO 802.11ac + 2.4GHz BT4.0, 802.11n chipset. The new SoC is based on Redpine’s Quali-Fi 802.11ac technology. It offers PHY data throughputs up to 1.3Gbps and an advanced 802.11ac feature set encompassing Multi-User MIMO and LDPC.

LISTED UNDER: Semiconductors, SoC

Low-Loss, Miniature Power MOSFETs for Improved Power Efficiency

April 10, 2012 9:59 am | Product Releases | Comments

Renesas Electronics Corporation announced the availability of eight new low-loss P- and N-channel power metal-oxide-semiconductor field-effect-transistor (MOSFET) products optimized for use in portable electronics including smartphones and tablets. Featuring industry-leading low loss (low on-resistance), the new devices include the 20 V (VDSS) µPA2600 and the 30 V µPA2601, equipped in ultracompact 2 mm × 2 mm packages to deliver increased power efficiency and miniaturization within smaller mobile device form factors.

LISTED UNDER: Semiconductors, FET

Hyperabrupt Varactor Diodes Suit VCO, Phase Noise and Voltage Tuned Filter Applications

March 26, 2012 5:57 am | Product Releases | Comments

Skyworks introduced three miniature 0402 hyperabrupt varactor diodes for VCO, phase noise and voltage-tuned filter applications. These discrete, small form factor devices are offered in a low profile plastic surface mount technology package where low resistance, low-series inductance and a large capacitance ratio are required.

LISTED UNDER: Semiconductors, Diodes

Miniature High-Speed Switching Diodes Offer PCB Size Reduction

March 6, 2012 5:26 am | Product Releases | Comments

Diodes Incorporated has introduced a family of high-speed switching diodes in a choice of small footprint, low-profile packages, enabling significant reductions in component count and PCB area, according to the company. Featuring breakdown voltage ratings of 75 V, 80 V and 85 V, the product line offers switching diode arrays in the miniature plastic SOT563, DFN1006-3 and DFN2020-6 packages.

LISTED UNDER: Semiconductors, Diodes

Freescale QorIQ Qonverge Macrocell Base SoC Delivers Industry’s Highest Performance

February 29, 2012 9:17 am | Product Releases | Comments

Multi-sector B4860 system-on-chip combines 28-nm process technology, multimode support and optimal cost/power Freescale Semiconductor is debuting its first large cell base station-on-chip product built on the innovative QorIQ Qonverge multimode platform. The new QorIQ Qonverge B4860 baseband processor delivers higher performance than other macrocell base station-on-chip SoCs supporting the LTE, LTE-Advanced and WCDMA standards.

LISTED UNDER: Semiconductors, SoC

SoC Enables Measurement and Diagnostics for High-Power Monitoring in Industrial Applications and Data Centers

February 9, 2012 11:35 am | Product Releases | Comments

Maxim’s Teridian power measurement and monitoring SoC provides a fully self-contained energy measurement solution for 3-phase point-of-load (POL) applications. Maxim Integrated Products has introduced the 78M6631, a Teridian 3-phase power measurement system-on-chip (SoC) that embeds power monitoring into high-load applications.

LISTED UNDER: Industrial | Semiconductors, SoC

ZigBee Smart Energy 2.0 SoC Integrates ARM Cortex-M3, Memory

January 24, 2012 6:04 am | Product Releases | Comments

Texas Instruments Incorporated announced a demonstration of a radio frequency (RF) system-on-chip (SoC) that integrates an IEEE 802.15.4 (2.4 GHz) radio, an ARM Cortex-M3 processor, dedicated Smart Energy (SE) 2.0 hardware security acceleration, and enough flash and RAM to run the ZigBee IP stack and SE2.

LISTED UNDER: Semiconductors, SoC

C-band Gallium Nitride High-Electron Mobility Transistors Address Satellite Earth Stations

December 1, 2011 7:24 am | Product Releases | Comments

Mitsubishi Electric Corporation announced it has developed two Gallium Nitride (GaN) High-Electron Mobility Transistor (HEMT) C-band (4–8GHz) amplifiers for satellite earth stations. The MGFC50G5867 and MGFC47G5867, featuring power outputs of an industry-leading 100W and 50W, respectively, will ship on a s ample basis beginning January 10, 2012.

LISTED UNDER: Semiconductors, Transistors

RF Amplifier MMICs Designed to Optimize 3G-4G Infrastructure Base Stations

November 16, 2011 6:20 am | Product Releases | Comments

Richardson RFPD today announces off-the-shelf availability for a complete set of key building-block RF amplifiers, each of which has been designed specifically for enhanced performance in demanding applications such as 3G/4G wireless communications systems. The product line is based on advanced semiconductor technologies, including InGaP HBT and Enhanced-Mode GaAs pHEMT (E-pHEMT), providing a superior combination of high dynamic range, low noise figure, and low intermodulation distortion relative to P1dB.

LISTED UNDER: Semiconductors, MMIC

GaN MMIC Power Amplifier Delivers 10W from 10 MHz to 10 GHz

September 12, 2011 6:52 am | Product Releases | Comments

Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has introduced a new GaN HEMT MMIC Wideband Power Amplifier which is ideal for test & measurement equipment and military EW and ECM applications up to 10 GHz. The HMC999 is a GaN HEMT MMIC Distributed Power Amplifier Chip which operates between 0.

LISTED UNDER: Semiconductors, MMIC


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