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GaAs MMIC Upconverter Covers 17.7 to 23.6 GHz

June 21, 2010 5:27 am | Product Releases | Comments

Hittite Microwave Corporation has introduced a new SMT packaged GaAs MMIC sub-harmonic upconverter which is well suited for point-to-point radio, satellite communications, test & measurement, sensors, military radar, EW and ELINT applications from 17.7 to 23.6 GHz. The HMC711LC5 delivers a small signal conversion gain of 15 dB and wide IF bandwidth of DC to 3.

LISTED UNDER: Semiconductors, MMIC
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180 nm Ultra CMOS Process

June 10, 2010 11:34 am | Product Releases | Comments

Peregrine Semiconductor Corporation has entered in an exclusive agreement with IBM for the development and manufacture of future generations of Peregrine’s patented UltraCMOS™ silicon-on-sapphire (SOS) process technology, the industry’s highest-performance radio frequency complementary metal-oxide semiconductor (RF CMOS) process.

Online Design Exploration Environment Launched for Small-Signal RF Transistors

May 17, 2010 10:42 am | Product Releases | Comments

NIJMEGEN, THE NETHERLANDS; PORTLAND, OR; and EL SEGUNDO, CA –- AWR®, Transim Technology and NXP Semiconductors recently announced the launch of the NXP SimPort Design Center for online design exploration of NXP’s small-signal RF transistors. The SimPort Design Center provides a variety of online design solutions across NXP’s product portfolio and features an “interactive datasheet” for small-signal RF transistors....

LISTED UNDER: Semiconductors, Transistors

High Performance GaAs MMIC Upconverter Covers 17.7 to 23.6 GHz

May 14, 2010 10:01 am | Product Releases | Comments

Hittite Microwave Corporation introduces a SMT packaged GaAs MMIC Sub-Harmonic Upconverter which is well suited for point-to-point radio, satellite communications, test & measurement, sensors, military radar, EW and ELINT applications from 17.7 to 23.6 GHz. The HMC711LC5 is a GaAs MMIC Sub-Harmonic upconverter which delivers a small signal conversion gain of 15 dB and wide IF bandwidth of DC to 3....

LISTED UNDER: Semiconductors, MMIC

Highly-Integrated GaAs MMIC Up-Converter Available in 4 x 4 mm QFN Package

April 8, 2010 1:19 pm | Product Releases | Comments

Now available from Mimix Broadband, Inc. is a 5.6 to 10.5 GHz GaAs MMIC up-converter that integrates a double balanced image reject mixer, LO buffer amplifier, RF buffer amplifier and variable attenuator, all within a fully molded 4x4mm QFN package. This RoHS-compliant, packaged up-converter has an output third order intercept point (OIP3) of +25 dBm, a conversion gain of 8 dB and a typical image rejection of 15 dBc.

LISTED UNDER: Semiconductors, MMIC

Ultra-low VF Power Schottky Diodes Suited for High-frequency Switched-mode Power Supplies

March 1, 2010 7:38 am | Product Releases | Comments

With the increase of environmental awareness, efficiency is now one of the main selling points for power supply and computer manufacturers. Following this trend, ST is releasing a new family of high-performance power Schottky rectifiers. The STPS50U100C is the first member of this new family. It is a dual 50 A, 100 V power Schottky rectifier, suited for high-frequency switched-mode power supplies....

LISTED UNDER: Power, Supplies | Semiconductors, Diodes

Plastic SMT Schottky Mixer/Detector Diodes

February 8, 2010 7:30 am | Product Releases | Comments

Aeroflex/Metelics introduces a family of surface mount GaAs and Silicon Schottky Mixer/Detector Diodes for high volume pick and place applications. These control devices are delivered in a plastic SMT package with standard 45 mils W X 75 mils L X 31 mils H dimensions. Their performance and mechanicals allow them to be easily dropped into existing designs.

LISTED UNDER: Semiconductors, Diodes

GaAs MMIC Delivers 32 dB Gain and Includes On-Chip Gate Bias Circuitry

January 22, 2010 10:01 am | Product Releases | Comments

Mimix Asia introduces a 2.7 to 3.8 GHz GaAs MMIC power amplifier that has 32 dB large signal gain and 41.5 dBm saturated output power. Identified as XP5002BD, this device includes on-chip gate bias circuitry and delivers 40% power added efficiency. The XP5002-BD is well suited for radar, satellite and commercial applications....

LISTED UNDER: Semiconductors, MMIC

GaAs MMIC Offers 5.625º Least Significant Bit (LSB) Phase Shift

December 14, 2009 11:48 am | Product Releases | Comments

\ Mimix Asia, a subsidiary of Mimix Broadband, Inc., introduces a 7 to 13 GHz GaAs MMIC 6-bit phase shifter with LVCMOS/TTL compatible digital control. Identified as XS1000-BD, this device has digitally controlled 6-bit operation and a least significant bit (LSB) of 5.625°. The XS1000-BD delivers +25 dBm P1dB input compression and is well suited for beamforming, EW receivers, military and weather radar, and SATCOM applications.

LISTED UNDER: Semiconductors, MMIC

E-PHEMT MMIC Amplifier Combines Low Noise and High IP3

August 3, 2009 11:41 am | Product Releases | Comments

Mini-Circuits’ PMA-545+ is a E-PHEMT based ultra-low noise MMIC amplifier operating from 100 MHz to 6 GHz with a unique combination of low noise and high IP3 making this amplifier appropriate for sensitive receiver applications. This design operates on a single 3 V supply and is internally matched to 50 Ohms.

LISTED UNDER: Semiconductors, MMIC

High Dynamic Range MMIC Amplifier

August 3, 2009 9:13 am | Product Releases | Comments

Mini-Circuits PHA-1+ Ultra high dynamic range MMIC amplifier supports low intermodulation amplification over the broad frequency range of 50 MHz to 6 GHz. This design provides a unique combination of high Output IP3 (typically +42 dBm) while maintaining a noise figure less than 3 dB up to 4 GHz and typical gain of 14 dB at 2 GHz.

LISTED UNDER: Semiconductors, MMIC

High Speed SiGe Process Replaces 8 GaAs Chips, Lowering Cost and Increasing Integration

July 2, 2009 9:00 am | Product Releases | Comments

SAN DIEGO & NEWPORT BEACH, Calif.--(BUSINESS WIRE) -- The University of California, San Diego (UCSD), provider of a leading program in microwave and millimeter-wave RFICs and mixed-signal, and Jazz Semiconductor®, a Tower Group Company today announced that they have collaborated to develop a two-antenna quad-beam RFIC phased array receiver covering the 11-15 GHz frequency range....

LISTED UNDER: Semiconductors, SiGe

First Complete, Front-to-Back Solution for MMIC, RF Module Design

June 11, 2009 5:07 am | Product Releases | Comments

Agilent Technologies Inc. introduces its Advanced Design System 2009 Update 1, a complete, front-to-back solution for monolithic microwave integrated circuit (MMIC) and RF module design. The release integrates 3-D electromagnetic (EM) analysis, wireless standards-based design verification libraries, X-parameter simulation, and statistical design and yield optimization....

LISTED UNDER: Semiconductors, MMIC

RF Power LDMOS Transistors Deliver Ease-of-Integration Features and High Efficiency

June 9, 2009 12:36 pm | Product Releases | Comments

Freescale Semiconductor has expanded on its commitment to GSM EDGE wireless networks with the introduction of three high-performance RF power transistors based on laterally-diffused metal oxide semiconductor (LDMOS) technology. The devices incorporate enhancements that make them easy to integrate into amplifiers while delivering exceptional levels of performance....

LISTED UNDER: Semiconductors, Transistors

GaAs MMIC Antenna Switch Supports Multi-band Transceiver Platforms

May 26, 2009 6:59 am | Product Releases | Comments

NEC's UPG2193T6E Single Pole Eight Throw (SP8T) GaAs MMIC antenna switch was developed specifically to meet the needs of new 3G UMTS, W-CDMA and Quad Band EDGE mobile phone designs. The UPG2193T6E was developed to meet the industry's need to replace the common two-switch solution with a single miniature device.

LISTED UNDER: Semiconductors, MMIC

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