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Simultaneous Dual-band 2.4GHz 802.11n/BT4.0 + 5GHz MIMO 802.11ac Convergence SoC

April 16, 2012 5:00 am | Product Releases | Comments

Redpine Signals announced the release of the industry’s first simultaneous dual-band 5GHz MIMO 802.11ac + 2.4GHz BT4.0, 802.11n chipset. The new SoC is based on Redpine’s Quali-Fi 802.11ac technology. It offers PHY data throughputs up to 1.3Gbps and an advanced 802.11ac feature set encompassing Multi-User MIMO and LDPC.

LISTED UNDER: Semiconductors, SoC

Low-Loss, Miniature Power MOSFETs for Improved Power Efficiency

April 10, 2012 9:59 am | Product Releases | Comments

Renesas Electronics Corporation announced the availability of eight new low-loss P- and N-channel power metal-oxide-semiconductor field-effect-transistor (MOSFET) products optimized for use in portable electronics including smartphones and tablets. Featuring industry-leading low loss (low on-resistance), the new devices include the 20 V (VDSS) µPA2600 and the 30 V µPA2601, equipped in ultracompact 2 mm × 2 mm packages to deliver increased power efficiency and miniaturization within smaller mobile device form factors.

LISTED UNDER: Semiconductors, FET

Hyperabrupt Varactor Diodes Suit VCO, Phase Noise and Voltage Tuned Filter Applications

March 26, 2012 5:57 am | Product Releases | Comments

Skyworks introduced three miniature 0402 hyperabrupt varactor diodes for VCO, phase noise and voltage-tuned filter applications. These discrete, small form factor devices are offered in a low profile plastic surface mount technology package where low resistance, low-series inductance and a large capacitance ratio are required.

LISTED UNDER: Semiconductors, Diodes
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Miniature High-Speed Switching Diodes Offer PCB Size Reduction

March 6, 2012 5:26 am | Product Releases | Comments

Diodes Incorporated has introduced a family of high-speed switching diodes in a choice of small footprint, low-profile packages, enabling significant reductions in component count and PCB area, according to the company. Featuring breakdown voltage ratings of 75 V, 80 V and 85 V, the product line offers switching diode arrays in the miniature plastic SOT563, DFN1006-3 and DFN2020-6 packages.

LISTED UNDER: Semiconductors, Diodes

Freescale QorIQ Qonverge Macrocell Base SoC Delivers Industry’s Highest Performance

February 29, 2012 9:17 am | Product Releases | Comments

Multi-sector B4860 system-on-chip combines 28-nm process technology, multimode support and optimal cost/power Freescale Semiconductor is debuting its first large cell base station-on-chip product built on the innovative QorIQ Qonverge multimode platform. The new QorIQ Qonverge B4860 baseband processor delivers higher performance than other macrocell base station-on-chip SoCs supporting the LTE, LTE-Advanced and WCDMA standards.

LISTED UNDER: Semiconductors, SoC

SoC Enables Measurement and Diagnostics for High-Power Monitoring in Industrial Applications and Data Centers

February 9, 2012 11:35 am | Product Releases | Comments

Maxim’s Teridian power measurement and monitoring SoC provides a fully self-contained energy measurement solution for 3-phase point-of-load (POL) applications. Maxim Integrated Products has introduced the 78M6631, a Teridian 3-phase power measurement system-on-chip (SoC) that embeds power monitoring into high-load applications.

LISTED UNDER: Industrial | Semiconductors, SoC

ZigBee Smart Energy 2.0 SoC Integrates ARM Cortex-M3, Memory

January 24, 2012 6:04 am | Product Releases | Comments

Texas Instruments Incorporated announced a demonstration of a radio frequency (RF) system-on-chip (SoC) that integrates an IEEE 802.15.4 (2.4 GHz) radio, an ARM Cortex-M3 processor, dedicated Smart Energy (SE) 2.0 hardware security acceleration, and enough flash and RAM to run the ZigBee IP stack and SE2.

LISTED UNDER: Semiconductors, SoC

C-band Gallium Nitride High-Electron Mobility Transistors Address Satellite Earth Stations

December 1, 2011 7:24 am | Product Releases | Comments

Mitsubishi Electric Corporation announced it has developed two Gallium Nitride (GaN) High-Electron Mobility Transistor (HEMT) C-band (4–8GHz) amplifiers for satellite earth stations. The MGFC50G5867 and MGFC47G5867, featuring power outputs of an industry-leading 100W and 50W, respectively, will ship on a s ample basis beginning January 10, 2012.

LISTED UNDER: Semiconductors, Transistors
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RF Amplifier MMICs Designed to Optimize 3G-4G Infrastructure Base Stations

November 16, 2011 6:20 am | Product Releases | Comments

Richardson RFPD today announces off-the-shelf availability for a complete set of key building-block RF amplifiers, each of which has been designed specifically for enhanced performance in demanding applications such as 3G/4G wireless communications systems. The product line is based on advanced semiconductor technologies, including InGaP HBT and Enhanced-Mode GaAs pHEMT (E-pHEMT), providing a superior combination of high dynamic range, low noise figure, and low intermodulation distortion relative to P1dB.

LISTED UNDER: Semiconductors, MMIC

GaN MMIC Power Amplifier Delivers 10W from 10 MHz to 10 GHz

September 12, 2011 6:52 am | Product Releases | Comments

Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has introduced a new GaN HEMT MMIC Wideband Power Amplifier which is ideal for test & measurement equipment and military EW and ECM applications up to 10 GHz. The HMC999 is a GaN HEMT MMIC Distributed Power Amplifier Chip which operates between 0.

LISTED UNDER: Semiconductors, MMIC

Miniature 0402 Schottky Diodes for Detector Applications

August 9, 2011 8:21 am | Product Releases | Comments

Skyworks Solutions has introduced two miniature 0402 Schottky diodes for detector applications in handsets, WLAN, CATV Satcom, land mobile radios and infrastructure platforms. These small form factor and low profile discrete solutions in SMT packages are ideal for general purpose detector, sampling and mixer circuits.

LISTED UNDER: Semiconductors, Diodes

Low-Dropout Voltage Regulator from Diodes Inc. Reduces Component Count and Saves Space

August 1, 2011 9:03 am | Product Releases | Comments

Diodes Inc. has introduced a single-channel low-dropout fast-transient linear regulator with fixed output voltage of 5V and +/-1% accuracy. The new low-dropout regulator integrates the voltage divider to reduce board space and external component count, enabling easier layout and reducing the opportunities for premature board failure.

LISTED UNDER: Semiconductors, Diodes

HEMT Transistors and MMIC Enhance S-Band Radar Applications

July 12, 2011 7:18 am | Product Releases | Comments

Cree released a family of packaged GaN HEMT power transistors and high power amplifier (HPA) MMIC in the 2.7-3.5 GHz range (S-Band) with what is presented as the industry's best-known combination of power and efficiency, achieving typical power-added efficiencies (PAEs) of 60%. This results in a reduction in power consumption of up to 20% over existing solutions.

LISTED UNDER: Semiconductors, MMIC | Semiconductors, Transistors | Radar

WaferSense Vibration Sensor Helps Identify Vibration Sources to Increase Wafer Yield

July 7, 2011 5:53 am | Product Releases | Comments

When a diffusion furnace team at a 200 mm fab experienced defect problems in specific stocker locations of its high volume semiconductor process, CyberOptics WaferSense Auto Vibration Sensors (AVS) helped test a theory that excessive vibrations created by stocker fans effected die yield. Shaped like a wafer, WaferSense Auto Vibration Sensors (AVS) can travel along an entire wafer path, collecting, recording and displaying exact vibration exposure.

LISTED UNDER: Wafers

Cree 1200V Z-Rec Family of Silicon Carbide Schottky Diodes Offers Higher Performance at Lower Cost for Power Conversion Applications

June 21, 2011 12:53 pm | Product Releases | Comments

Cree announces a new family of seven 1200V Z-Rec silicon carbide Schottky diodes optimized for price and performance and available in a range of amperages and packages. Cree is advancing the adoption of silicon carbide power devices into mainstream power applications by introducing a comprehensive family of SiC diodes with a wide range of amperage ratings and package options.

LISTED UNDER: Semiconductors, Diodes

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