Endwave Corporation has announced its Model EWH2001ZZ distributed power amplifier (PA) for commercial, industrial, and military applications from DC to 20 GHz. Based on GaAs pseudomorphic high-electron-mobility-transistor (pHEMT) technology, the monolithic-microwave-integrated-circuit (MMIC) distributed PA delivers +26 dBm typical output power at 1-dB compression (P1dB) through 12 GHz and typically +23 dBm through 20 GHz....LISTED UNDER: Semiconductors, MMIC
In the operating environment seen by electronics today there are numerous sources of electromagnetic interference (EMI) and radio frequency interference (RFI). This is due in large part to the increased use of RF technology. These types of interference result in the need for common mode filtering in applications utilizing differential interfaces.
Miniature 0402 Diodes for High Volume Commercial and Industrial OEMs, ODMs and Contract ManufacturersSeptember 28, 2010 9:34 am | Product Releases | Comments
Skyworks Solutions, Inc. has introduced four miniature 0402 diodes for high volume commercial and industrial original equipment manufacturers (OEMs), original device manufacturers (ODMs) and contract manufacturers (CMs) – all of which are offered in a low profile, plastic surface mount technology (SMT) package....LISTED UNDER: Industrial | Semiconductors, Diodes
Hittite Microwave Corporation has introduced a new SMT packaged GaAs MMIC sub-harmonic upconverter which is well suited for point-to-point radio, satellite communications, test & measurement, sensors, military radar, EW and ELINT applications from 17.7 to 23.6 GHz. The HMC711LC5 delivers a small signal conversion gain of 15 dB and wide IF bandwidth of DC to 3.LISTED UNDER: Semiconductors, MMIC
Peregrine Semiconductor Corporation has entered in an exclusive agreement with IBM for the development and manufacture of future generations of Peregrine’s patented UltraCMOS™ silicon-on-sapphire (SOS) process technology, the industry’s highest-performance radio frequency complementary metal-oxide semiconductor (RF CMOS) process.
NIJMEGEN, THE NETHERLANDS; PORTLAND, OR; and EL SEGUNDO, CA –- AWR®, Transim Technology and NXP Semiconductors recently announced the launch of the NXP SimPort Design Center for online design exploration of NXP’s small-signal RF transistors. The SimPort Design Center provides a variety of online design solutions across NXP’s product portfolio and features an “interactive datasheet” for small-signal RF transistors....LISTED UNDER: Semiconductors, Transistors
Hittite Microwave Corporation introduces a SMT packaged GaAs MMIC Sub-Harmonic Upconverter which is well suited for point-to-point radio, satellite communications, test & measurement, sensors, military radar, EW and ELINT applications from 17.7 to 23.6 GHz. The HMC711LC5 is a GaAs MMIC Sub-Harmonic upconverter which delivers a small signal conversion gain of 15 dB and wide IF bandwidth of DC to 3....LISTED UNDER: Semiconductors, MMIC
Now available from Mimix Broadband, Inc. is a 5.6 to 10.5 GHz GaAs MMIC up-converter that integrates a double balanced image reject mixer, LO buffer amplifier, RF buffer amplifier and variable attenuator, all within a fully molded 4x4mm QFN package. This RoHS-compliant, packaged up-converter has an output third order intercept point (OIP3) of +25 dBm, a conversion gain of 8 dB and a typical image rejection of 15 dBc.LISTED UNDER: Semiconductors, MMIC
With the increase of environmental awareness, efficiency is now one of the main selling points for power supply and computer manufacturers. Following this trend, ST is releasing a new family of high-performance power Schottky rectifiers. The STPS50U100C is the first member of this new family. It is a dual 50 A, 100 V power Schottky rectifier, suited for high-frequency switched-mode power supplies....LISTED UNDER: Power, Supplies | Semiconductors, Diodes
Aeroflex/Metelics introduces a family of surface mount GaAs and Silicon Schottky Mixer/Detector Diodes for high volume pick and place applications. These control devices are delivered in a plastic SMT package with standard 45 mils W X 75 mils L X 31 mils H dimensions. Their performance and mechanicals allow them to be easily dropped into existing designs.LISTED UNDER: Semiconductors, Diodes
By Akshaya Trivedi, Altera Corporation Figure 1. SoC framework and infrastructure. Radio Access Networks (RANs) are undergoing an architecture change to an all-IP flat network to reduce network deployment costs as well as to offer rich mobile applications and services at a lower end-to-end latency.
Mimix Asia introduces a 2.7 to 3.8 GHz GaAs MMIC power amplifier that has 32 dB large signal gain and 41.5 dBm saturated output power. Identified as XP5002BD, this device includes on-chip gate bias circuitry and delivers 40% power added efficiency. The XP5002-BD is well suited for radar, satellite and commercial applications....LISTED UNDER: Semiconductors, MMIC
\ Mimix Asia, a subsidiary of Mimix Broadband, Inc., introduces a 7 to 13 GHz GaAs MMIC 6-bit phase shifter with LVCMOS/TTL compatible digital control. Identified as XS1000-BD, this device has digitally controlled 6-bit operation and a least significant bit (LSB) of 5.625°. The XS1000-BD delivers +25 dBm P1dB input compression and is well suited for beamforming, EW receivers, military and weather radar, and SATCOM applications.LISTED UNDER: Semiconductors, MMIC
Mini-Circuits’ PMA-545+ is a E-PHEMT based ultra-low noise MMIC amplifier operating from 100 MHz to 6 GHz with a unique combination of low noise and high IP3 making this amplifier appropriate for sensitive receiver applications. This design operates on a single 3 V supply and is internally matched to 50 Ohms.LISTED UNDER: Semiconductors, MMIC
Mini-Circuits PHA-1+ Ultra high dynamic range MMIC amplifier supports low intermodulation amplification over the broad frequency range of 50 MHz to 6 GHz. This design provides a unique combination of high Output IP3 (typically +42 dBm) while maintaining a noise figure less than 3 dB up to 4 GHz and typical gain of 14 dB at 2 GHz.LISTED UNDER: Semiconductors, MMIC