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RFMW Supports High Current, High Speed Driver from IXYS RF

July 2, 2013 5:08 pm | by WDD Staff | Product Releases | Comments

RFMW has announced design and sales support for IXYS RF model IXRFD631, a high-current CMOS gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC
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RFMW SP5T Switches for LMR and Military Radios

June 25, 2013 3:31 pm | by WDD Staff | Wireless Design & Development | Product Releases | Comments

RFMW has announced design and sales support for two new Peregrine Semiconductor SP5T switches targeting T/R and filter-band switching in Land Mobile Radio (LMR) and Military radio applications where high power handling (17W) is required.

LISTED UNDER: IC | Switches, IC | Filters, EMC / RFI

Agilent Technologies Enhances Parameter Analyzer

June 24, 2013 10:23 am | by WDD Staff | Wireless Design & Development | Product Releases | Comments

Agilent Technologies has announced source/monitor unit (SMU) and software enhancements to its B1500A semiconductor device analyzer, the industry’s leading semiconductor parameter analyzer. The new B1514A 50-µs pulse medium-current SMU gives a faster pulse at 30V/1A range plus oscilloscope-like viewing.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Cree Ships Over Two Million GaN HEMT Devices for Telecom Infrastructure

June 19, 2013 12:46 pm | by WDD Staff | Wireless Design & Development | Product Releases | Comments

Cree reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth.

LISTED UNDER: Semiconductors, Transistors | Amplifiers, Other | Transmission, Other

TVS Diode Array from Littelfuse Reduces Clamping Voltage

June 13, 2013 4:13 pm | by WDD Staff | Product Releases | Comments

Littelfuse has introduced the SP3051-04HTG Transient Voltage Suppression (TVS) Diode Array (SPA Diode), the latest addition to the lightning surge devices in the company’s TVS Diode Array line. It integrates low capacitance rail-to-rail diodes with an additional zener diode to protect I/O pins against ESD and lightning-induced surge events.

LISTED UNDER: Semiconductors, Diodes

Peregrine’s Next-Generation Phase-Locked Loop Device

June 13, 2013 12:38 pm | by WDD Staff | Wireless Design & Development | Product Releases | Comments

Peregrine Semiconductor announced from booth #1811 at the International Microwave Symposium in Seattle it has further expanded its high-frequency product line with the Integer-N PE33241 Phase-Locked Loop (PLL). The UltraCMOS technology-based PLL features a very low phase noise Figure of Merit.

LISTED UNDER: Phase Shifters | Semiconductors, Diodes | Semiconductors, FET

Peregrine Semiconductor High-Frequency CMOS RF Switches

June 12, 2013 2:58 pm | by WDD Staff | Wireless Design & Development | Product Releases | Comments

Peregrine Semiconductor Corporation announced from booth #1811 at the International Microwave Symposium in Seattle it has set new standards of performance for high-frequency CMOS RF switches with the launch of the SPDT PE42520 and PE42521 devices.

LISTED UNDER: Switches, IC | Phase Shifters | Power, Other

Miniature 0402 PIN Diode for Transmit/Receive Switching

June 7, 2013 5:00 pm | by WDD Staff | Product Releases | Comments

Skyworks Solutions (Woburn, MA) has introduced a miniature 0402 PIN diode for attenuator and transmit/receive switching applications. The SMP1302-040LF is a small form factor, low profile, discrete surface mount technology packaged solution that is ideal for the handset, WLAN, CATV/Satcom, land mobile radio and infrastructure markets.

LISTED UNDER: Semiconductors, Diodes

RFMW Introduces 800-Micron Discrete FET

June 5, 2013 3:48 pm | by WDD Staff | Wireless Design & Development | Product Releases | Comments

RFMW (San Jose, CA) has announced design and sales support for a discrete 800-Micron GaAs pHEMT FET. The TGF2080 from TriQuint Semiconductor is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage.

LISTED UNDER: Semiconductors, FET | Amplifiers, Other

Rugged LDMOS Ups the Power

June 5, 2013 9:43 am | by WDD Staff | Product Releases | Comments

NXP Semiconductors N.V. (Seattle, WA) has introduced the BLF188XR – the newest member of its XR family of “eXtremely Rugged” LDMOS RF power transistors. Designed for the toughest engineering environments, the BLF188XR delivers improved ruggedness in real-world conditions...

LISTED UNDER: Semiconductors, Transistors

High Capacitance Ratio, Low Series Resistance

May 21, 2013 10:06 am | by WDD Staff | Product Releases | Comments

RFMW, Ltd. has announced design and sales support for Skyworks diode products. The SMV1771-040LF is a surface mount, hyperabrupt, tuning varactor diode offering a high capacitance ratio and low series resistance. Features include voltage controlled oscillators (VCOs) that operate from VHF to 2.5 GHz.

LISTED UNDER: Semiconductors, Diodes

MACOM's High-Power GaN in Plastic Transistor

May 17, 2013 11:01 am | by WDD Staff | Product Releases | Comments

M/A-COM Technology Solutions has introduced its series of GaN in Plastic packaged power transistors for high-performance civilian and military radar and communications systems. Scaling to peak pulse power levels of 100W – the highest among competing components in this product category.

LISTED UNDER: Semiconductors, Transistors

RFMW Introduces Dual LNA from TriQuint Semiconductor

May 17, 2013 10:45 am | by WDD Staff | Product Releases | Comments

RFMW announces design and sales support for TriQuint Semiconductor dual device amplifier model TQP3M9041. Spanning the frequency range of 2.4GHz to 4GHz, this high linearity, ultra-low noise figure LNA offers a 0.8dB noise figure in a balanced configuration at 1.95GHz.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Touchstone Semiconductor’s TS3300 Boost Regulator

May 16, 2013 11:49 am | by WDD Staff | Product Releases | Comments

Touchstone Semiconductor has announced the TS3300 boost regulator. The TS3300 uses only 3.5 µA of supply current, and the TS3300’s efficiency performance is constant over a 100:1 span in output current. Additional features include anti-crush, automatic start-up current limiting.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

RFMW Introduces 600-Micron Discrete FET

May 15, 2013 11:28 am | by WDD Staff | Wireless Design & Development | Product Releases | Comments

RFMW, Ltd. (San Jose, CA) has announced the discrete 600-Micron GaAs pHEMT FET. The TGF2060 from TriQuint Semiconductor is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Features include...

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

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