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50V GaN on SiC RF Power Transistor from Microsemi

November 11, 2013 3:26 pm | by WDD Staff | Product Releases | Comments

Richardson RFPD (LaFox, IL) introduced a new 50V gallium nitride on silicon carbide (GaN on SiC) RF power high-electron-mobility transistor (HEMT) from Microsemi Corporation (Microsemi).

LISTED UNDER: Semiconductors, Transistors

Infineon Broadens RF Portfolio with New Transistors

October 30, 2013 11:49 am | by WDD Staff | Product Releases | Comments

Infineon Technologies has introduced its 50V LDMOS transistors designed for use in UHF TV broadcast transmitters, including one device providing the highest peak power output available for this application. The higher power output across the entire 470 – 806 MHz TV broadcast band gives amplifier designers the option to use fewer transistors to achieve target output power, which...

LISTED UNDER: Semiconductors, Transistors

TriQuint’s New GaN Solutions

October 17, 2013 1:16 pm | by WDD Staff | Product Releases | Comments

TriQuint Semiconductor announced the release of new gallium nitride (GaN) transistors that offer superior gain, thermal management and efficiency for commercial and defense RF amplifier designs.

LISTED UNDER: Semiconductors, Transistors
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Osram Dragon Dome: Long Distance Security Surveillance

October 9, 2013 3:48 pm | by WDD Staff | Product Releases | Comments

Security surveillance over large distances is now possible thanks to the new infrared Dragon Dome LED from Osram Opto Semiconductors...

LISTED UNDER: Optoelectronics & Displays | Semiconductors, Diodes

TriQuint Semiconductor Releases Internally Matched Gain Block

October 9, 2013 2:22 pm | by WDD Staff | Product Releases | Comments

RFMW announces design and sales support for the TQL9047 gain block from TriQuint Semiconductor.

LISTED UNDER: Semiconductors, Diodes | Semiconductors, FET | Semiconductors, IC

Integrated Control MMIC for Commercial Radar Applications

October 9, 2013 10:32 am | by WDD Staff | Product Releases | Comments

MACOM has announced an integrated core chip for the 8 – 11 GHz frequency range. Containing 6-bits of phase control, 6-bits of attenuation control and 26 dB of gain, MACOM’s Core Chip is an easy to use serial/parallel interface in a surface mount QFN package.

LISTED UNDER: Semiconductors, MMIC

Headlamp Pro LED Simplifies Implementation of Advanced Forward Lighting Systems

October 2, 2013 4:29 pm | by WDD Staff | Product Releases | Comments

Advanced Forward Lighting Systems (AFS), which adapt their illumination direction when driving through curving roads and other scenarios, can now be even more easily implemented by automobile manufacturers.

LISTED UNDER: Optoelectronics & Displays | Semiconductors, Diodes | Semiconductors, FET

Ultra-small P-channel Enhancement-Mode Power MOSFETs

October 2, 2013 11:04 am | by WDD Staff | Product Releases | Comments

Advanced Power Electronics has launched a new P-channel Enhancement-mode Power MOSFET, the AP2325GEU6-HF-3, which is well-suited for use in applications such as load switches.

LISTED UNDER: Semiconductors, Transistors
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MACOM’s New 600 W GaN on SiC Pulsed Power Transistor

September 25, 2013 3:31 pm | by WDD Staff | Product Releases | Comments

Internally-matched, 600 W Power Transistor Provides High Gain, Efficiency, and Ruggedness over the 1,030 to 1,090 MHz Bandwidth.

LISTED UNDER: Power, Other | Semiconductors, Transistors

New Littelfuse Low Capacitance TVS Diode Arrays Offer Extra Protection

September 18, 2013 12:37 pm | by WDD Staff | Product Releases | Comments

Littelfuse has introduced two series of discrete low capacitance TVS Diode Arrays (SPA Diodes) optimized to help telecommunications circuit and hardware designers safeguard  telecom interfaces from lightning-induced surges and electrostatic discharge (ESD) damage.

LISTED UNDER: Semiconductors, Diodes

RFMW Supports 120W GaN Transistors from TriQuint Semiconductor

September 17, 2013 12:31 pm | by WDD Staff | Product Releases | Comments

RFMW has announced design and sales support for TriQuint Semiconductor wideband GaN on SiC transistors. The TriQuint T1G4012036-FL is a 120 W peak (24 W avg.) (P3dB) discrete transistor in a flange package while the TriQuint T1G4012036-FS provides an earless configuration.

LISTED UNDER: Semiconductors, Transistors

Cypress Introduces Ultra Low-Power PSoC 1 Devices with Integrated USB

September 13, 2013 12:17 pm | by WDD Staff | Product Releases | Comments

Cypress Semiconductor announced a new device series in its PSoC 1 programmable system-on-chip family. The new CY8C24x93 device series, the lowest-power and lowest-cost devices in the PSoC 1 family, is optimized for battery-powered applications, leveraging a 1.1 µA standby mode and 100 nA deep-sleep mode to extend battery life.

LISTED UNDER: Semiconductors, SoC

New Littelfuse SIDACtor Protection Thyristor Provides 45 Percent Lower Capacitance

September 5, 2013 3:03 pm | by WDD Staff | Product Releases | Comments

Littelfuse has introduced an ultra-low capacitance protection thyristor. The SDP Series SIDACtor Protection Thyristor in the SOT23-6 package provides robust overvoltage protection for broadband/xDSL telecommunications equipment with minimal effects on connection speed and reach.

LISTED UNDER: Semiconductors, SoC | Wafers

RFMW to Support Broad Band Limiter/LNA from TriQuint Semiconductor

September 3, 2013 6:47 pm | by WDD Staff | Product Releases | Comments

RFMW has announced design and sales support for TriQuint Semiconductor’s integrated limiter/LNA multi-chip module TGM2543-SM. The TriQuint TGM2543-SM is targeted at the Radar market where 4 to 20 GHz frequency coverage in a surface mount package offers cost and performance benefits.

LISTED UNDER: Semiconductors, IC

New Isolated Tab SCR's from NTE

September 3, 2013 5:49 pm | by WDD Staff | Product Releases | Comments

NTE has added three NEW 25 A, TO-220 Isolated Tab SCR's to their Semiconductor line: NTE5552-I (200 V), NTE5554-I (400 V), NTE5556-I (600 V).

LISTED UNDER: Semiconductors, IC | Semiconductors, SoC

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