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GaAs pHEMT MMIC Receiver on a Single Chip

May 30, 2001 11:55 am | Product Releases | Comments

Mimix Broadband introduced a totally integrated gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver on a single chip. This device is a three stage low noise amplifier (LNA) followed by an image reject fundamental mixer using Lange couplers to improve bandwidth. Using 0....

LISTED UNDER: Semiconductors, MMIC

Integrated GaAs pHEMT MMIC Receiver

April 30, 2001 6:15 am | Product Releases | Comments

Mimix Broadband announced the introduction of a totally integrated gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver on a single chip. This device is a three stage low noise amplifier (LNA) followed by an image reject fundamental mixer using Lange couplers to optimize bandwidth....

LISTED UNDER: Semiconductors, MMIC

RF LDMOS High Power Transistors

April 10, 2001 10:21 am | Product Releases | Comments

Motorola, Inc. introduces a new family of RF power plastic LDMOS devices optimized for 1.0 GHz base station applications. Fully characterized and individually tuned to operate at frequencies to 1.0 GHz, this family of RF LDMOS devices is housed in the TO-270 RF power plastic package. The TO-270 is a JEDEC registered, two-lead RF power plastic package....

LISTED UNDER: Semiconductors, Transistors
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GaAs MMIC Power Amplifier

April 6, 2001 5:21 am | Product Releases | Comments

Mimix Broadband introduced a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage power amplifier optimized for linear operation with a typical third order intercept point (IP3) of 36 dBm. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the power amplifier covers the 17 to 24 GHz frequency band and has a typical small signal gain of 18 dB....

LISTED UNDER: Semiconductors, MMIC

High-Intensity Visible Light-Emitting Diodes(LEDs)

April 6, 2001 5:21 am | Product Releases | Comments

Lumex is announcing its new line of high-intensity visible light-emitting diodes (LEDs). These through-hole and surface-mount technology (SMT) devices, based on the latest AlInGaP (Aluminum Indium Gallium Phosphate) chip technology, offer intensities which are two to five times brighter than the pervious generation of LEDs....

LISTED UNDER: Semiconductors, Diodes

5 GHz SiGe Low Noise Amplifier Provides 1.8 dB for 802.11a

April 6, 2001 5:21 am | Product Releases | Comments

Maxim Integrated Products introduced a 5 GHz SiGe LNA optimized for 802.11a and HiperLAN2 WLAN systems. The MAX2648 provides 17 dB gain, 1.8 dB noise figure, and 0 dBm input IP3 at 5.2 GHz while consuming 12mA. The high gain, low noise, and high linearity performance make it flexible for use as a first stage LNA, an LO buffer, or a transmitter driver amplifier....

LISTED UNDER: Semiconductors, SiGe

MMIC DPDT Diversity Switch

April 6, 2001 5:21 am | Product Releases | Comments

Hittite Microwave introduces a C-band DPDT switch that operates between 5.0 and 6.0 GHz. The HMC393MS8G features 1.2 dB insertion loss and provides P1 dB of 34 dBm with 5 volts bias. This design can operate as an integrated antenna diversity and transmit/receive switch for the HiperLAN and UNII radio platforms providing 20 dB of isolation between antennas and between Tx and Rx ports....

LISTED UNDER: Semiconductors, MMIC

90 Watt LDMOS RF Power Transistors for UMTS

April 6, 2001 5:20 am | Product Releases | Comments

UltraRF, Inc., a leader in manufacturing high-power, high-performance laterally diffused metal oxide silicon (LDMOS) RF power semiconductors for the wireless industry, announces its UPF21090 discrete RF power transistor. The UPF21090 UltraGOLDII™ LDMOS product is specifically designed for UMTS base station applications in the 2....

LISTED UNDER: Semiconductors, Transistors
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Advanced MMIC Technology For Fixed Wireless Access

February 22, 2001 5:01 am | Product Releases | Comments

By Steven Daly, Hitttite Microwave Corporation The demand for broadband fixed wireless access equipment is challenging semiconductor suppliers to produce integrated circuit (IC) components at frequencies above established GSM and PCS bands. New broadband systems operate at frequency between 3....

LISTED UNDER: Semiconductors, MMIC

LDMOS RF Power Transistors

February 13, 2001 9:49 am | Product Releases | Comments

UltraRF unveiled its UPF18060 discrete RF power transistor that is designed with the company's UltraGOLDII LDMOS technology for reliable performance. It serves as a drop-in replacement for Motorola MRF18060. The UPF18060 ranks as the first UltraGOLDII LDMOS product in the company's new family of drop-in replacements with a frequency band of 1....

LISTED UNDER: Semiconductors, Transistors

20 to 30 GHz MMIC LMDS Receiver

February 13, 2001 9:48 am | Product Releases | Comments

Spacek Labs model no. MM25-6LNA is an integrated receiver consisting of a low noise amplifier, mixer, and LO doubler-amp. The RF frequency range is 20 to 30 GHz. The LO frequency range is 10 to 15 GHz @– 4 to 0 dBm, and the IF range is DC to 5 GHz. SSB noise figure is 3.0 dB (typ), 3.5 dB (max)....

LISTED UNDER: Semiconductors, MMIC

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