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SiGe Low Noise Amplifier

August 13, 2001 11:02 am | Product Releases | Comments

Atmel® announced a new triple gain low-noise amplifier (LNA) manufactured in Silicon-Germanium (SiGe) technology. The IC T0952 is a new member of Atmel's SiGe LNA family and can be used for conventional superheterodyne or direct-conversion receivers in 1800 MHz to 2000 MHz PCN (GSM 1800) and PCS mobile phone applications....

LISTED UNDER: Semiconductors, SiGe
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RF SiGe Front End Integrated Circuit

June 28, 2001 7:33 am | Product Releases | Comments

Atmel® announced the availability of its well-known highly integrated RF Silicon-Germanium (SiGe) front end IC (including a low-noise amplifier and a power amplifier) for the radio part of long range, 100 meter, Bluetooth™ systems in Flipchip technology. Due to Flipchip technology, the T7024 is much smaller and more cost-effective than conventionally-packaged Gallium-Arsenide (GaAs) solutions....

LISTED UNDER: Semiconductors, SiGe

GaAs HBT MMIC Divide-by-4 Prescaler for DC - 12.5 GHz

June 28, 2001 7:33 am | Product Releases | Comments

Hittite Microwave introduces a low noise, Divide-by-4 Static Prescaler with InGaP GaAs HBT technology in an 8 lead surface mount plastic package. The HMC365S8G features a wide operating input window and low additive SSB phase noise of -151 dBc/Hz at 100 kHz offset. This device operates from DC (with a square wave input) to 12....

LISTED UNDER: Semiconductors, MMIC

Surface Mount GaAs HBT MMIC Divide-by-4 Prescaler

June 28, 2001 7:33 am | Product Releases | Comments

Hittite Microwave introduces a low noise, Divide-by-4 Static Prescaler with InGaP GaAs HBT technology in an 8 lead surface mount plastic package. The HMC362S8G features a wide operating input window and low additive SSB phase noise of -149 dBc/Hz at 100 kHz offset. This device operates from DC (with a square wave input) to 12 GHz input frequency with a single +5....

LISTED UNDER: Semiconductors, MMIC

GaAs HBT MMIC Divide-by-8 Prescaler for DC - 12.0 GHz

June 28, 2001 7:33 am | Product Releases | Comments

Hittite Microwave introduces a low noise, Divide-by-8 Static Prescaler with InGaP GaAs HBT technology that operates to 12 GHz. The HMC363 features a wide operating input window, a selectable output power bias option, and a low additive SSB phase noise of -153 dBc/Hz at 100 kHz offset. This device operates from DC (with a square wave input) to 12 GHz input frequency and operates from a single +5....

LISTED UNDER: Semiconductors, MMIC

Surface Mount GaAs HBT MMIC Divide-by-2 Prescaler

June 28, 2001 7:33 am | Product Releases | Comments

Hittite Microwave introduces a low noise, Divide-by-2 Static Prescaler with InGaP GaAs HBT technology in an 8 lead surface mount plastic package. The HMC364S8G features a wide operating input window and low additive SSB phase noise of -145 dBc/Hz at 100 kHz offset. This device operates from DC (with a square wave input) to 12....

LISTED UNDER: Semiconductors, MMIC

SiGe Low Noise Amplifier Provides 1.8 dB for 802.11a

June 20, 2001 5:03 am | Product Releases | Comments

Maxim Integrated Products introduced a 5 GHz SiGe LNA optimized for 802.11a and HiperLAN2 WLAN systems. The MAX2648 provides 17 dB gain, 1.8 dB noise figure, and 0 dBm input IP3 at 5.2 GHz while consuming 12mA. The high gain, low noise, and high linearity performance make it flexible for use as a first stage LNA, an LO buffer, or a transmitter driver amplifier....

LISTED UNDER: Semiconductors, SiGe

Mimix Broadband Introduces Single Chip GaAs MMIC Up-converter That Enables Lower Cost and Smaller Size Designs

June 11, 2001 4:49 am | Product Releases | Comments

Mimix Broadband announced today the introduction of a totally integrated gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) up-converter on a single chip. This device is a single fundamental mixer followed by a single stage amplifier. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the up-converter covers the 17 to 27 GHz frequency band....

LISTED UNDER: Semiconductors, MMIC

GaAs RFIC, Schottky-Barrier and PIN Diodes

June 11, 2001 4:49 am | Product Releases | Comments

Agilent Technologies announced a GaAs RFIC and a series of single and dual Schottky-barrier and PIN Diodes in the new surface mount MiniPak package. The package features a height of only 0.7 mm max and a footprint of only 1.75 square mm, combined with very low parasitics, and high thermal conductivity for higher power dissipation....

LISTED UNDER: Semiconductors, Diodes

GaAs pHEMT MMIC Receiver on a Single Chip

May 30, 2001 11:55 am | Product Releases | Comments

Mimix Broadband introduced a totally integrated gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver on a single chip. This device is a three stage low noise amplifier (LNA) followed by an image reject fundamental mixer using Lange couplers to improve bandwidth. Using 0....

LISTED UNDER: Semiconductors, MMIC

Integrated GaAs pHEMT MMIC Receiver

April 30, 2001 6:15 am | Product Releases | Comments

Mimix Broadband announced the introduction of a totally integrated gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver on a single chip. This device is a three stage low noise amplifier (LNA) followed by an image reject fundamental mixer using Lange couplers to optimize bandwidth....

LISTED UNDER: Semiconductors, MMIC

RF LDMOS High Power Transistors

April 10, 2001 10:21 am | Product Releases | Comments

Motorola, Inc. introduces a new family of RF power plastic LDMOS devices optimized for 1.0 GHz base station applications. Fully characterized and individually tuned to operate at frequencies to 1.0 GHz, this family of RF LDMOS devices is housed in the TO-270 RF power plastic package. The TO-270 is a JEDEC registered, two-lead RF power plastic package....

LISTED UNDER: Semiconductors, Transistors

GaAs MMIC Power Amplifier

April 6, 2001 5:21 am | Product Releases | Comments

Mimix Broadband introduced a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage power amplifier optimized for linear operation with a typical third order intercept point (IP3) of 36 dBm. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the power amplifier covers the 17 to 24 GHz frequency band and has a typical small signal gain of 18 dB....

LISTED UNDER: Semiconductors, MMIC

High-Intensity Visible Light-Emitting Diodes(LEDs)

April 6, 2001 5:21 am | Product Releases | Comments

Lumex is announcing its new line of high-intensity visible light-emitting diodes (LEDs). These through-hole and surface-mount technology (SMT) devices, based on the latest AlInGaP (Aluminum Indium Gallium Phosphate) chip technology, offer intensities which are two to five times brighter than the pervious generation of LEDs....

LISTED UNDER: Semiconductors, Diodes

5 GHz SiGe Low Noise Amplifier Provides 1.8 dB for 802.11a

April 6, 2001 5:21 am | Product Releases | Comments

Maxim Integrated Products introduced a 5 GHz SiGe LNA optimized for 802.11a and HiperLAN2 WLAN systems. The MAX2648 provides 17 dB gain, 1.8 dB noise figure, and 0 dBm input IP3 at 5.2 GHz while consuming 12mA. The high gain, low noise, and high linearity performance make it flexible for use as a first stage LNA, an LO buffer, or a transmitter driver amplifier....

LISTED UNDER: Semiconductors, SiGe

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