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SiGe Fabrication Process

May 6, 2002 10:49 am | Product Releases | Comments

A new, high-speed Silicon Germanium (SiGe) fabrication process has been brought online by Micrel. This new, 0.6 μm ASSET-2 SiGe process gives Micrel the necessary technology to move into the 10 Gbps communication space. Micrel's new GigaPro™ product line will address high-speed applications with data rates in excess of 10 Gbps....

LISTED UNDER: Semiconductors, SiGe

Twin NPN Transistors

May 6, 2002 7:16 am | Product Releases | Comments

California Eastern Laboratories (CEL) announced the availability of NEC's UPA twin transistors in a new, smaller package. With an outline of 1.2 × 0.8 mm and a height of 0.50 mm, the new 6 pin TD package is ideal for size-constrained applications like VCO modules for cellular and cordless phones, Special Mobile Radios, pagers, PCMCIA cards, keyless entry transmitters, and other portable wireless products....

LISTED UNDER: Semiconductors, Transistors

GaAs MMIC SPDT Switch

May 6, 2002 7:16 am | Product Releases | Comments

California Eastern Labs now offers NEC's latest in ultraminiature GaAs MMIC SPDT switches: the UPG2008TK. Housed in NEC's newest 1.3 mm × 1.5 mm six pin, recessed lead TK package, the UPG2008TK features a footprint thatss less than half the size of conventional SOT-363-style package switches....

LISTED UNDER: Semiconductors, MMIC
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CSR Extends Relationship with SiGe Semiconductor, Selects PA2423L Bluetooth Class 1 Power Amplifier for BlueCore2 Reference Design

April 22, 2002 12:40 pm | Product Releases | Comments

SiGe Semiconductor announced that CSR (Cambridge Silicon Radio) has chosen SiGe's PA2423L Class 1 Bluetooth(TM) power amplifier for its BlueCore(TM)2 reference design. The BlueCore2 reference design is the third of CSR's BlueCore-based development systems to integrate a power amplifier from SiGe Semiconductor's PA2423 family of devices....

LISTED UNDER: Semiconductors, SiGe

MMIC Mixer With Integrated LO and IF Amplifiers

April 4, 2002 8:30 am | Product Releases | Comments

Hittite Microwave introduces a high linearity down-converter receiver IC designed to support WCDMA applications where a high third order intercept (OIP3) point is required. A passive mixer coupled with a high dynamic range IF amplifier achieves an OIP3 of +29 dBm, and an input IP3 of +19 dBm. The HMC421QS16 provides a gain of 8 dB and 10 dB typical single sideband noise....

LISTED UNDER: Semiconductors, MMIC

GaAs Transistors for Base Station Receiver Designs

April 4, 2002 8:30 am | Product Releases | Comments

Agilent Technologies announced two additional GaAs transistors available in the company's MiniPak miniature leadless package. These GaAs transistors are targeted at PC card and base station receiver designs. The Agilent MiniPak measures 1.4 mm × 1.2 mm × 0.7 mm. The 400-micron ATF-551M4 is a single voltage E-pHEMT GaAs FET that does not need a negative gate bias voltage for operation....

LISTED UNDER: Semiconductors, Transistors

MMIC Mixer Line Expanded

February 27, 2002 9:34 am | Product Releases | Comments

WJ Communications announced the expansion of its MMIC mixer line with two low-cost high linearity models. These passive gallium arsenide (GaAs) IC mixers are ideally suited for 3G UMTS wireless infrastructure equipment. The MH101 and MH102 mixers offer high dynamic range with Input IP3 greater than 30 dBm and Input P1 dB of 16 dBm across the entire UMTS frequency range of 1....

LISTED UNDER: Semiconductors, MMIC

GaAs MMIC Receiver

February 27, 2002 9:34 am | Product Releases | Comments

Mimix Broadband announced the introduction of a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver comprised of a three stage low noise amplifier (LNA) followed by a single transistor "Tee" attenuator and an image reject fundamental resistive high electron mobility transistor (HEMT) mixer....

LISTED UNDER: Semiconductors, MMIC
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MMIC Receiver for High Index Modulation Schemes

January 29, 2002 3:56 am | Product Releases | Comments

Mimix Broadband introduced a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver comprised of a three stage low noise amplifier (LNA) followed by an image reject fundamental resistive high electron mobility transistor (HEMT) mixer. The image reject mixer removes the need for a bandpass filter after the LNA to remove thermal noise at the image frequency....

LISTED UNDER: Semiconductors, MMIC

36 to 40 GHz GaAs MMIC Up-Converter

December 3, 2001 3:38 am | Product Releases | Comments

Mimix Broadband announced the introduction of a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) up-converter, which is comprised of a pair of sub-harmonic mixers configured to form an image reject mixer. This is followed by a two stage low noise amplifier (LNA). The image reject mixer removes the need for a bandpass filter after the mixer to suppress the unwanted sideband....

LISTED UNDER: Semiconductors, MMIC

Highly Integrated GaAs MMIC Receiver

November 29, 2001 8:39 am | Product Releases | Comments

Mimix Broadband announced the introduction of a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver, which is comprised of a two stage low noise amplifier (LNA) followed by a pair of sub-harmonic mixers, configured to form an image reject mixer. The image reject mixer removes the need for a bandpass filter after the LNA to remove thermal noise at the image frequency....

LISTED UNDER: Semiconductors, MMIC

SiGe Transistor

November 29, 2001 8:38 am | Product Releases | Comments

California Eastern Laboratories (CEL) has announced the availability of a new Silicon Germanium low noise transistor from NEC. Ideal for use as a first stage LNA or oscillator in 1.6, 1.9, 2.4, 3.5, or 5.8 GHz designs, the NESG2030M04 delivers great performance in an ultraminiature package. Specification features (@ 2 GHz) include low noise of 0....

LISTED UNDER: Semiconductors, SiGe

Medium Power Transistors

October 30, 2001 9:17 am | Product Releases | Comments

California Eastern Laboratories (CEL) introduces three NPN high frequency, medium power silicon transistors from NEC. Fabricated using NEC's high frequency wafer process, the NE644M04, NE678M04 and NE677M04 are usable in applications from 100 MHz to 3 GHz. Designed to serve as driver amplifiers or as power amplifier stages, these low cost parts are ideal for cellular and cordless phones, pagers, two-way radios and in fixed wireless transcei...

LISTED UNDER: Semiconductors, Transistors

GaAs pHEMT MMIC Buffer Amplifier

October 30, 2001 8:03 am | Product Releases | Comments

Mimix Broadband announced the introduction of a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) four stage buffer amplifier. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this gain block amplifier covers the 36 to 43 GHz frequency bands....

LISTED UNDER: Semiconductors, MMIC

SiGe Heterojunction Bipolar Transistors

October 30, 2001 8:03 am | Product Releases | Comments

Toshiba introduced a family of Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) devices. Toshiba's line-up of SiGe-based RFICs will initially include the MT4S100U, a high-frequency transistor, currently offering low noise levels, and a high-power gain transistor, designated the MT4S101U....

LISTED UNDER: Semiconductors, SiGe | Semiconductors, Transistors

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