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GaAs MMIC Receiver

February 27, 2002 9:34 am | Product Releases | Comments

Mimix Broadband announced the introduction of a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver comprised of a three stage low noise amplifier (LNA) followed by a single transistor "Tee" attenuator and an image reject fundamental resistive high electron mobility transistor (HEMT) mixer....

LISTED UNDER: Semiconductors, MMIC
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MMIC Receiver for High Index Modulation Schemes

January 29, 2002 3:56 am | Product Releases | Comments

Mimix Broadband introduced a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver comprised of a three stage low noise amplifier (LNA) followed by an image reject fundamental resistive high electron mobility transistor (HEMT) mixer. The image reject mixer removes the need for a bandpass filter after the LNA to remove thermal noise at the image frequency....

LISTED UNDER: Semiconductors, MMIC

36 to 40 GHz GaAs MMIC Up-Converter

December 3, 2001 3:38 am | Product Releases | Comments

Mimix Broadband announced the introduction of a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) up-converter, which is comprised of a pair of sub-harmonic mixers configured to form an image reject mixer. This is followed by a two stage low noise amplifier (LNA). The image reject mixer removes the need for a bandpass filter after the mixer to suppress the unwanted sideband....

LISTED UNDER: Semiconductors, MMIC

Highly Integrated GaAs MMIC Receiver

November 29, 2001 8:39 am | Product Releases | Comments

Mimix Broadband announced the introduction of a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver, which is comprised of a two stage low noise amplifier (LNA) followed by a pair of sub-harmonic mixers, configured to form an image reject mixer. The image reject mixer removes the need for a bandpass filter after the LNA to remove thermal noise at the image frequency....

LISTED UNDER: Semiconductors, MMIC

SiGe Transistor

November 29, 2001 8:38 am | Product Releases | Comments

California Eastern Laboratories (CEL) has announced the availability of a new Silicon Germanium low noise transistor from NEC. Ideal for use as a first stage LNA or oscillator in 1.6, 1.9, 2.4, 3.5, or 5.8 GHz designs, the NESG2030M04 delivers great performance in an ultraminiature package. Specification features (@ 2 GHz) include low noise of 0....

LISTED UNDER: Semiconductors, SiGe

Medium Power Transistors

October 30, 2001 9:17 am | Product Releases | Comments

California Eastern Laboratories (CEL) introduces three NPN high frequency, medium power silicon transistors from NEC. Fabricated using NEC's high frequency wafer process, the NE644M04, NE678M04 and NE677M04 are usable in applications from 100 MHz to 3 GHz. Designed to serve as driver amplifiers or as power amplifier stages, these low cost parts are ideal for cellular and cordless phones, pagers, two-way radios and in fixed wireless transcei...

LISTED UNDER: Semiconductors, Transistors

GaAs pHEMT MMIC Buffer Amplifier

October 30, 2001 8:03 am | Product Releases | Comments

Mimix Broadband announced the introduction of a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) four stage buffer amplifier. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this gain block amplifier covers the 36 to 43 GHz frequency bands....

LISTED UNDER: Semiconductors, MMIC

SiGe Heterojunction Bipolar Transistors

October 30, 2001 8:03 am | Product Releases | Comments

Toshiba introduced a family of Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) devices. Toshiba's line-up of SiGe-based RFICs will initially include the MT4S100U, a high-frequency transistor, currently offering low noise levels, and a high-power gain transistor, designated the MT4S101U....

LISTED UNDER: Semiconductors, SiGe | Semiconductors, Transistors

Recovery Diodes

October 30, 2001 8:02 am | Product Releases | Comments

Fairchild Semiconductor International announces the availability of packaged pairs of Stealth™ soft recovery diodes for improved efficiency with reduced space in switch mode power supplies (SMPS). Stealth Diode technology combines high speed and soft recovery characteristics to achieve higher efficiency and lower electromagnetic interference (EMI)....

LISTED UNDER: Semiconductors, Diodes

SiGe HBT IF Receiver/Demodulator Line

October 22, 2001 4:34 am | Product Releases | Comments

Stanford Microdevices introduced a new silicon germanium (SiGe) IF receiver/demodulator ideally suited to 2G, 2.5G, 3G, WLAN and fixed wireless infrastructure applications. The SRF-2016 extends Stanford Microdevices' offering of SiGe IF receiver/demodulators and complements the already-released 65 to 300 MHz SRF-1016....

LISTED UNDER: Semiconductors, SiGe | Modulators

SiGe:C Integrated RF Cascode Amplifier

September 28, 2001 10:41 am | Product Releases | Comments

Motorola Inc.'s Semiconductor Products Sector has introduced a cost-effective, high isolation cascode amplifier using Silicon Germanium:Carbon (SiGe:C) technology. This unique amplifier can help to simplify RF designs for 100 MHz to 2.5 GHz applications, and is available in the ultra-small SOT-343R miniature surface mount package....

LISTED UNDER: Semiconductors, SiGe

Ku-Band MMIC VCO

September 28, 2001 10:41 am | Product Releases | Comments

Hittite introduces a Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated divide-by-8 prescaler packaged in a low cost, surface mount 16 leaded QSOP package with an exposed base for improved RF and thermal performance. The HMC401QS16G features a Pout of > -8 dBm from a 5 V supply, SSB Phase Noise of -110 dBc/Hz @ 100 kHz, and no external resonator is needed....

LISTED UNDER: Semiconductors, MMIC

SiGe Active Receive Mixers

September 28, 2001 10:01 am | Product Releases | Comments

Stanford Microdevices introduced a new family of silicon germanium (SiGe) active receive mixers ideally suited to 2G, 2.5G, 3G, WLAN, and fixed-wireless infrastructure applications. The SRM-1016 and SRM-3016 extend Stanford Microdevices' offering of silicon germanium (SiGe) active receive mixers and complement the already-released 1700 to 2300 MHz SRM-2016....

LISTED UNDER: Semiconductors, SiGe

GaAs MMIC Up-Converter

August 30, 2001 9:29 am | Product Releases | Comments

Mimix Broadband announced the introduction of a totally integrated gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) up-converter on a single chip. This device is a single fundamental mixer followed by a single stage amplifier. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the up-converter covers the 17 to 27 GHz frequency band....

LISTED UNDER: Semiconductors, MMIC

Software Recovery Diodes

August 30, 2001 9:29 am | Product Releases | Comments

Fairchild Semiconductor International announces the availability of packaged pairs of Stealth™ soft recovery diodes for improved efficiency with reduced space in switch mode power supplies (SMPS). Stealth Diode technology combines high speed and soft recovery characteristics to achieve higher efficiency and lower electromagnetic interference (EMI)....

LISTED UNDER: Semiconductors, Diodes

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