Advertisement

Field Effect Transistors

July 2, 2003 9:47 am | Product Releases | Comments

Toshiba announces a 90-watt C-Band GaAs field effect transistor (FET). The TIM5964-90SL features output power of 49.5 dBm (typical) at a frequency range of 5.9 to 6.4 GHz. Gain (G1dB) is 7 dB typical. Drain current (IDS) is 18.0 A typical. IM3 is – 40 dBc typical at 43.5 dBm S.C.L. (949) 455-2000; www....

LISTED UNDER: Semiconductors, Transistors

Transistors

May 30, 2003 11:38 am | Product Releases | Comments

The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 μm × 1500 μm Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels....

LISTED UNDER: Semiconductors, Transistors

MMIC Mixers

May 30, 2003 11:38 am | Product Releases | Comments

These MMICs utilize Quad-MOSFET mixers and include integral RF and LO baluns within a 3 × 3 mm, six-pin, DFN, surface mount package. An external IF balun can be used to accommodate single-ended operation if a differential signal is not desired. These passive mixers do not require biasing and have a noise figure of 8 dB....

LISTED UNDER: Semiconductors, MMIC
Advertisement

RF Power Transistors

April 29, 2003 7:27 am | Product Releases | Comments

Motorola introduces its sixth generation of RF power transistors for GSM, EDGE, CDMA, and WCDMA base station amplifiers. These RF LDMOS devices help develop low cost, efficient cellular base stations for voice, data, and video transmissions. At 2.2 GHz, typical performance for a 90 watt (P1dB) device is: WCDMA output power is 17 watts; large signal gain is 17 dB; efficiency is 28....

LISTED UNDER: Semiconductors, Transistors

MMIC VCO

March 28, 2003 3:52 am | Product Releases | Comments

The HMC384LP4 is ideal for cellular/3G and broadband wireless data systems applications. This MMIC VCO requires no external components, consumes 35 mA from a single supply of +3 V, and provides +3.5 dBm buffered output power. The low phase noise performance of – 112 dBc/Hz at 100 kHz offset is excellent over temperature, shock, vibration, and process due to the monolithic structure of the oscillators....

LISTED UNDER: Semiconductors, MMIC

MMIC Amplifiers

March 28, 2003 3:52 am | Product Releases | Comments

The MHC455LP3 and HMC461LP3 amplifiers are ideal for a variety of PCS/3G wireless infrastructure applications offering +19 dBm and +20 dBm WCDMA channel output power respectively at – 45 dBc ACP. The 1/2 watt HMC455LP3 provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 V DC supply voltage....

LISTED UNDER: Semiconductors, MMIC

Wafers

February 25, 2003 12:07 pm | Product Releases | Comments

PolarFab introduces 8 inches wafers of its PBC4 0.5-micron BiCMOS process. The PBC4 process is designed for smart-power and power management IC applications and provides the ability to integrate dense 0.5-micron CMOS with high-voltage drivers, enabling the fabrication of complex smart-power chips....

LISTED UNDER: Wafers

Low Noise MMIC VCO

February 25, 2003 12:07 pm | Product Releases | Comments

Hittite introduces a pair of GaAs InGaP HBT MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes and buffer amplifiers covering applications from 5.0 to 6.1 GHz. The HMC430LP4 and HMC431LP4 are ideal for C-band applications including 802.11a or HiperLAN WLAN, VSAT, UNII, and point-to-point radios....

LISTED UNDER: Semiconductors, MMIC
Advertisement

GaAs MMICs Catalog

January 27, 2003 10:31 am | Product Releases | Comments

Mimix Broadband announces a new version of its print product catalog. The catalog update includes new products, expanded datasheets with more comprehensive information and measurement curves, application notes, and a complete listing of the company's international sales representative network. The catalog includes critical performance parameters of MMIC devices, applications notes, and engineering guidelines....

LISTED UNDER: Semiconductors, MMIC

SiGe ICs

November 1, 2002 6:04 am | Product Releases | Comments

The MAX9989/MAX9990 are +20 dBm LO buffers. These single ICs provide ۫ dB output power variance while replacing three discrete amplifiers, a coupler, and dozens of biasing components. They are ideal for cellular/GSM/DCS/PCS, and UMTS base station applications. The designer can set the output power levels from +14 dBm to +20 dBm....

LISTED UNDER: Semiconductors, SiGe

SiGe Power Amplifier

September 27, 2002 6:33 am | Product Releases | Comments

The MAX2247 PA is available in the tiny 3 x 4 UCSP™ measuring 1.5 × 2.0 mm. The device is ideal for small form factor WLAN applications. The MAX2247 integrates a three-stage power amplifier with on-chip input and interstage match, output power detector, and power management circuitry. The power detector provides over 20 dB of dynamic range with ۪....

LISTED UNDER: Semiconductors, SiGe

SiGe Transistors

September 27, 2002 6:07 am | Product Releases | Comments

The NESG2021 and NESG2031 are ideal for use as LNA devices in WLAN and short-range wireless applications. They are housed in a miniature, low profile, flat lead M05 packaged. The NESG2021 features a noise figure of 0.9 dB at 2 GHz and 1.3 dB at 5.2 GHz; associated gain is 18 dB at 2 GHz and 11 dB at 5....

LISTED UNDER: Semiconductors, SiGe | Semiconductors, Transistors

SiGe LNA Transistor

September 11, 2002 5:17 am | Product Releases | Comments

     A low noise figure and excellent linearity make the NESG2101M05 an ideal first stage device for 802.11a W-LAN, CDMA, and OFDM transceiver applications. Its high P 1dB makes it an excellent driver output stage in low power transmitters. Its high V CEO rating means it can be operated at voltages up to 5 V....

LISTED UNDER: Semiconductors, SiGe

SiGe Driver/Receiver

September 11, 2002 5:17 am | Product Releases | Comments

The NBSG16VS is a 2.5V / 3.3V Silicon Germanium (SiGe) differential driver/receiver with a variable output swing that can be programmed to provide output amplitudes ranging between 100 mV to 700 mV peak-to-peak. The NBSG16VS delivers ultra low jitter, improved signal integrity, a small footprint and optimum performance for 10 Gbps data rates....

LISTED UNDER: Semiconductors, SiGe

Varactor Tuning Diodes

September 11, 2002 5:17 am | Product Releases | Comments

The 3022 Series of high ratio, hyperabrupt, varactor tuning diodes are designed to control crystal oscillator frequency with a DC bias voltage that can be varied from ל.3 to נ.0 volts. The capacitance variation (C/V) of the diode over this range is approximately a factor of 10/1. The series is available in industry-standard packages including SOT-23, SOD-323 and SOD-523 (SC-79, SC90), and are designed for surface mount application...

LISTED UNDER: Semiconductors, Diodes

Pages

X
You may login with either your assigned username or your e-mail address.
The password field is case sensitive.
Loading