Advertisement

SiGe Transistors

September 27, 2002 6:07 am | Product Releases | Comments

The NESG2021 and NESG2031 are ideal for use as LNA devices in WLAN and short-range wireless applications. They are housed in a miniature, low profile, flat lead M05 packaged. The NESG2021 features a noise figure of 0.9 dB at 2 GHz and 1.3 dB at 5.2 GHz; associated gain is 18 dB at 2 GHz and 11 dB at 5....

LISTED UNDER: Semiconductors, SiGe | Semiconductors, Transistors
Advertisement

SiGe LNA Transistor

September 11, 2002 5:17 am | Product Releases | Comments

     A low noise figure and excellent linearity make the NESG2101M05 an ideal first stage device for 802.11a W-LAN, CDMA, and OFDM transceiver applications. Its high P 1dB makes it an excellent driver output stage in low power transmitters. Its high V CEO rating means it can be operated at voltages up to 5 V....

LISTED UNDER: Semiconductors, SiGe

SiGe Driver/Receiver

September 11, 2002 5:17 am | Product Releases | Comments

The NBSG16VS is a 2.5V / 3.3V Silicon Germanium (SiGe) differential driver/receiver with a variable output swing that can be programmed to provide output amplitudes ranging between 100 mV to 700 mV peak-to-peak. The NBSG16VS delivers ultra low jitter, improved signal integrity, a small footprint and optimum performance for 10 Gbps data rates....

LISTED UNDER: Semiconductors, SiGe

Varactor Tuning Diodes

September 11, 2002 5:17 am | Product Releases | Comments

The 3022 Series of high ratio, hyperabrupt, varactor tuning diodes are designed to control crystal oscillator frequency with a DC bias voltage that can be varied from ל.3 to נ.0 volts. The capacitance variation (C/V) of the diode over this range is approximately a factor of 10/1. The series is available in industry-standard packages including SOT-23, SOD-323 and SOD-523 (SC-79, SC90), and are designed for surface mount application...

LISTED UNDER: Semiconductors, Diodes

MMIC Mixer

August 6, 2002 10:26 am | Product Releases | Comments

The MAMXSS0003 is a low-side LO MMIC mixer optimized for use in 1.8 GHz to 2.2 GHz cellular base stations and wireless communications infrastructure. Fabricated on a 1 micron GaAs MESFET process, this mixer is well suited for use as an up/down converter or modulator for multi-mode transmitters and receivers....

LISTED UNDER: Semiconductors, MMIC

MMIC Power Amplifier

June 4, 2002 9:35 am | Product Releases | Comments

Model CMM1430-KU is a 1 watt power amplifier for transmit subsystem function in Ku-band VSAT applications. The amplifier operates from 13.75 to 14.50 GHz and offers 34.5 dB of linear gain, 32 dBm saturated output power and 50 ohm internal matching. The CMM1430-KU is packaged in a space-efficient flange package designed with a base material of gold-plated copper/moly composite, which offers excellent thermal dissipation....

LISTED UNDER: Semiconductors, MMIC

Improving MMIC and RFIC Design Flows

May 8, 2002 8:21 am | Product Releases | Comments

New EDA technologies like Microwave Office 2002 and new foundry libraries help to streamline the development of RF and microwave ICs. By Ted Miracco, Applied Wave Research, Inc. In the 1990s, digital application specific integrated circuit (ASIC) designers experienced a process and productivity revolution that was brought about by advances in electronic design automation (EDA)....

LISTED UNDER: Semiconductors, MMIC

HBT MMIC Power Amplifiers

May 6, 2002 12:03 pm | Product Releases | Comments

Hittite Microwave introduces a highly efficient family of Heterojunction Bipolar Transistor (HBT) MMIC Power Amplifiers, operating between 4.4 - 7.0 GHz with up to +29 dBm output power. These amplifiers are ideal for low cost UNII and HiperLAN applications from 5.0 - 6.0 GHz. The HMC415LP3 provides 20 dB of gain and +26 dBm of saturated power at 34% PAE from a +3....

LISTED UNDER: Semiconductors, MMIC

SiGe Fabrication Process

May 6, 2002 10:49 am | Product Releases | Comments

A new, high-speed Silicon Germanium (SiGe) fabrication process has been brought online by Micrel. This new, 0.6 μm ASSET-2 SiGe process gives Micrel the necessary technology to move into the 10 Gbps communication space. Micrel's new GigaPro™ product line will address high-speed applications with data rates in excess of 10 Gbps....

LISTED UNDER: Semiconductors, SiGe

Twin NPN Transistors

May 6, 2002 7:16 am | Product Releases | Comments

California Eastern Laboratories (CEL) announced the availability of NEC's UPA twin transistors in a new, smaller package. With an outline of 1.2 × 0.8 mm and a height of 0.50 mm, the new 6 pin TD package is ideal for size-constrained applications like VCO modules for cellular and cordless phones, Special Mobile Radios, pagers, PCMCIA cards, keyless entry transmitters, and other portable wireless products....

LISTED UNDER: Semiconductors, Transistors

GaAs MMIC SPDT Switch

May 6, 2002 7:16 am | Product Releases | Comments

California Eastern Labs now offers NEC's latest in ultraminiature GaAs MMIC SPDT switches: the UPG2008TK. Housed in NEC's newest 1.3 mm × 1.5 mm six pin, recessed lead TK package, the UPG2008TK features a footprint thatss less than half the size of conventional SOT-363-style package switches....

LISTED UNDER: Semiconductors, MMIC

CSR Extends Relationship with SiGe Semiconductor, Selects PA2423L Bluetooth Class 1 Power Amplifier for BlueCore2 Reference Design

April 22, 2002 12:40 pm | Product Releases | Comments

SiGe Semiconductor announced that CSR (Cambridge Silicon Radio) has chosen SiGe's PA2423L Class 1 Bluetooth(TM) power amplifier for its BlueCore(TM)2 reference design. The BlueCore2 reference design is the third of CSR's BlueCore-based development systems to integrate a power amplifier from SiGe Semiconductor's PA2423 family of devices....

LISTED UNDER: Semiconductors, SiGe

MMIC Mixer With Integrated LO and IF Amplifiers

April 4, 2002 8:30 am | Product Releases | Comments

Hittite Microwave introduces a high linearity down-converter receiver IC designed to support WCDMA applications where a high third order intercept (OIP3) point is required. A passive mixer coupled with a high dynamic range IF amplifier achieves an OIP3 of +29 dBm, and an input IP3 of +19 dBm. The HMC421QS16 provides a gain of 8 dB and 10 dB typical single sideband noise....

LISTED UNDER: Semiconductors, MMIC

GaAs Transistors for Base Station Receiver Designs

April 4, 2002 8:30 am | Product Releases | Comments

Agilent Technologies announced two additional GaAs transistors available in the company's MiniPak miniature leadless package. These GaAs transistors are targeted at PC card and base station receiver designs. The Agilent MiniPak measures 1.4 mm × 1.2 mm × 0.7 mm. The 400-micron ATF-551M4 is a single voltage E-pHEMT GaAs FET that does not need a negative gate bias voltage for operation....

LISTED UNDER: Semiconductors, Transistors

MMIC Mixer Line Expanded

February 27, 2002 9:34 am | Product Releases | Comments

WJ Communications announced the expansion of its MMIC mixer line with two low-cost high linearity models. These passive gallium arsenide (GaAs) IC mixers are ideally suited for 3G UMTS wireless infrastructure equipment. The MH101 and MH102 mixers offer high dynamic range with Input IP3 greater than 30 dBm and Input P1 dB of 16 dBm across the entire UMTS frequency range of 1....

LISTED UNDER: Semiconductors, MMIC

Pages

X
You may login with either your assigned username or your e-mail address.
The password field is case sensitive.
Loading