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LDMOS Transistors

September 2, 2003 8:28 am | Product Releases | Comments

The LB501 is Polyfet's high power LDMOS single die LDMOS FET. The output power is rated at 175 watts @ 500 MHz with a minimum gain of 13 dB. It is targeted for operation in the 1 MHz to 600 MHz range. S-Parameters, Spice Models and Zin / Zout data is available. A 30 MHz to 512 MHz design example of this FETs capability is the TB167A demonstration amplifier....

LISTED UNDER: Semiconductors, Transistors

MMIC VCOs

September 2, 2003 8:28 am | Product Releases | Comments

Hittite announces the release of eight MMIC voltage controlled oscillators (VCOs) that cover wireless infrastructure, test equipment, microwave radio and military applications between 2 and 6.8 GHz. The MMIC VCOs are fabricated on a production qualified process and integrate the resonator structure, negative resistance circuitry, tuning varactor and output buffer amplifier, thus requiring no external components....

LISTED UNDER: Semiconductors, MMIC

Limiter Diodes

September 2, 2003 8:28 am | Product Releases | Comments

Micrometrics introduces the MLP 7100 series of limiter diodes. The devices are application specific PIN devices that are fabricated to have low loss (< 0.1 dB) and fast recovery time (< 5.0 ns) over a frequency range of 100 MHz to 22 GHz. Power in is > +70 dBm and leakage out is < +19 dBm....

LISTED UNDER: Semiconductors, Diodes
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RF Transistors

July 30, 2003 9:51 am | Product Releases | Comments

Motorola introduces 100 W, 900 MHz RF power transistors in plastic packaging. The MRF5S9100M is designed for CDMA applications and demonstrates typical performances of 17 dB gain, 23 W average output power and 30% efficiency at – 45 dBc adjacent channel power). The MRF5S910M is a 100 W, 900 MHz plastic RF power transistor that is optimized for GSM and GSM EDGE applications....

LISTED UNDER: Semiconductors, Transistors

MMIC Buffer Amplifier

July 8, 2003 11:09 am | Product Releases | Comments

Mimix Broadband announces a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three stage buffer amplifier, which can be operated with all three stages biased in parallel, or with independent bias for input and output stages as required to optimize performance. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this buffer amplifier covers the 16 to 30 GHz...

LISTED UNDER: Semiconductors, MMIC

Field Effect Transistors

July 2, 2003 9:47 am | Product Releases | Comments

Toshiba announces a 90-watt C-Band GaAs field effect transistor (FET). The TIM5964-90SL features output power of 49.5 dBm (typical) at a frequency range of 5.9 to 6.4 GHz. Gain (G1dB) is 7 dB typical. Drain current (IDS) is 18.0 A typical. IM3 is – 40 dBc typical at 43.5 dBm S.C.L. (949) 455-2000; www....

LISTED UNDER: Semiconductors, Transistors

Transistors

May 30, 2003 11:38 am | Product Releases | Comments

The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 μm × 1500 μm Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels....

LISTED UNDER: Semiconductors, Transistors

MMIC Mixers

May 30, 2003 11:38 am | Product Releases | Comments

These MMICs utilize Quad-MOSFET mixers and include integral RF and LO baluns within a 3 × 3 mm, six-pin, DFN, surface mount package. An external IF balun can be used to accommodate single-ended operation if a differential signal is not desired. These passive mixers do not require biasing and have a noise figure of 8 dB....

LISTED UNDER: Semiconductors, MMIC
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RF Power Transistors

April 29, 2003 7:27 am | Product Releases | Comments

Motorola introduces its sixth generation of RF power transistors for GSM, EDGE, CDMA, and WCDMA base station amplifiers. These RF LDMOS devices help develop low cost, efficient cellular base stations for voice, data, and video transmissions. At 2.2 GHz, typical performance for a 90 watt (P1dB) device is: WCDMA output power is 17 watts; large signal gain is 17 dB; efficiency is 28....

LISTED UNDER: Semiconductors, Transistors

MMIC VCO

March 28, 2003 3:52 am | Product Releases | Comments

The HMC384LP4 is ideal for cellular/3G and broadband wireless data systems applications. This MMIC VCO requires no external components, consumes 35 mA from a single supply of +3 V, and provides +3.5 dBm buffered output power. The low phase noise performance of – 112 dBc/Hz at 100 kHz offset is excellent over temperature, shock, vibration, and process due to the monolithic structure of the oscillators....

LISTED UNDER: Semiconductors, MMIC

MMIC Amplifiers

March 28, 2003 3:52 am | Product Releases | Comments

The MHC455LP3 and HMC461LP3 amplifiers are ideal for a variety of PCS/3G wireless infrastructure applications offering +19 dBm and +20 dBm WCDMA channel output power respectively at – 45 dBc ACP. The 1/2 watt HMC455LP3 provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 V DC supply voltage....

LISTED UNDER: Semiconductors, MMIC

Wafers

February 25, 2003 12:07 pm | Product Releases | Comments

PolarFab introduces 8 inches wafers of its PBC4 0.5-micron BiCMOS process. The PBC4 process is designed for smart-power and power management IC applications and provides the ability to integrate dense 0.5-micron CMOS with high-voltage drivers, enabling the fabrication of complex smart-power chips....

LISTED UNDER: Wafers

Low Noise MMIC VCO

February 25, 2003 12:07 pm | Product Releases | Comments

Hittite introduces a pair of GaAs InGaP HBT MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes and buffer amplifiers covering applications from 5.0 to 6.1 GHz. The HMC430LP4 and HMC431LP4 are ideal for C-band applications including 802.11a or HiperLAN WLAN, VSAT, UNII, and point-to-point radios....

LISTED UNDER: Semiconductors, MMIC

GaAs MMICs Catalog

January 27, 2003 10:31 am | Product Releases | Comments

Mimix Broadband announces a new version of its print product catalog. The catalog update includes new products, expanded datasheets with more comprehensive information and measurement curves, application notes, and a complete listing of the company's international sales representative network. The catalog includes critical performance parameters of MMIC devices, applications notes, and engineering guidelines....

LISTED UNDER: Semiconductors, MMIC

SiGe ICs

November 1, 2002 6:04 am | Product Releases | Comments

The MAX9989/MAX9990 are +20 dBm LO buffers. These single ICs provide ۫ dB output power variance while replacing three discrete amplifiers, a coupler, and dozens of biasing components. They are ideal for cellular/GSM/DCS/PCS, and UMTS base station applications. The designer can set the output power levels from +14 dBm to +20 dBm....

LISTED UNDER: Semiconductors, SiGe

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