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SiGe Extends Its Reach: <br>Power Amplifiers Supply Wireless and Cellular Applications

October 28, 2003 11:15 am | Product Releases | Comments

New engineering techniques allow SiGe to be used in high-power amplifiers for CDMA, GSM, and WLAN applications; enable the next generation of integration. By Jerry Loraine and Steve Kovacic, SiGe Semiconductor Silicon germanium (SiGe) has grown from a promising technology to a leading-edge solution for current and next-generation mobile devices, including cellular, wireless local area network (WLAN), and Bluetooth....

LISTED UNDER: Semiconductors, SiGe

Schottky Barrier Diodes

October 28, 2003 10:16 am | Product Releases | Comments

Torex Semiconductor Europe introduces two series of Schottky barrier diodes, the XB01SB04A2BR, and the XB0ASB03A1BR. The XB0ASB03A1BR, supplied in a SOD-323 package, has an average rectification current of 0.5 A and, when operating at 0.5 A, a forward voltage of 410 mV. Reverse voltage is 20 V and reverse current typically 35 μA....

LISTED UNDER: Semiconductors, Diodes

MMIC Amplifier

October 28, 2003 10:16 am | Product Releases | Comments

Mimix Broadband announces a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three stage buffer amplifier. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this buffer amplifier covers the 35 to 45 GHz frequency bands....

LISTED UNDER: Semiconductors, MMIC
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GaAs MMIC Switches

October 28, 2003 10:16 am | Product Releases | Comments

Housed in NEC's low profile, flat lead TK package, the UPG2030TK measures 1.1 × 1.5 × 0.5 mm. The UPG2030TB is available in NEC's SOT-363 style TB package. Both versions deliver the same "no compromises" performance: frequency range is 0.5 to 2.5 GHz; P 1dB is +30 dBm typical @ 2....

LISTED UNDER: Switches, IC | Semiconductors, MMIC

MMIC Amplifier Application Note

September 2, 2003 8:37 am | Product Releases | Comments

Agilent Technologies announces an application note that details how to design an MMIC amplifier using Agilent's Advanced Design System (ADS) software. The 40-page document illustrates several common problems engineers face when designing, simulating and producing a physical layout of an MMIC circuit, as well as the validation steps needed to verify that the physical layout still produces the desired result....

LISTED UNDER: Semiconductors, MMIC

LDMOS Transistors

September 2, 2003 8:28 am | Product Releases | Comments

The LB501 is Polyfet's high power LDMOS single die LDMOS FET. The output power is rated at 175 watts @ 500 MHz with a minimum gain of 13 dB. It is targeted for operation in the 1 MHz to 600 MHz range. S-Parameters, Spice Models and Zin / Zout data is available. A 30 MHz to 512 MHz design example of this FETs capability is the TB167A demonstration amplifier....

LISTED UNDER: Semiconductors, Transistors

MMIC VCOs

September 2, 2003 8:28 am | Product Releases | Comments

Hittite announces the release of eight MMIC voltage controlled oscillators (VCOs) that cover wireless infrastructure, test equipment, microwave radio and military applications between 2 and 6.8 GHz. The MMIC VCOs are fabricated on a production qualified process and integrate the resonator structure, negative resistance circuitry, tuning varactor and output buffer amplifier, thus requiring no external components....

LISTED UNDER: Semiconductors, MMIC

Limiter Diodes

September 2, 2003 8:28 am | Product Releases | Comments

Micrometrics introduces the MLP 7100 series of limiter diodes. The devices are application specific PIN devices that are fabricated to have low loss (< 0.1 dB) and fast recovery time (< 5.0 ns) over a frequency range of 100 MHz to 22 GHz. Power in is > +70 dBm and leakage out is < +19 dBm....

LISTED UNDER: Semiconductors, Diodes
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RF Transistors

July 30, 2003 9:51 am | Product Releases | Comments

Motorola introduces 100 W, 900 MHz RF power transistors in plastic packaging. The MRF5S9100M is designed for CDMA applications and demonstrates typical performances of 17 dB gain, 23 W average output power and 30% efficiency at – 45 dBc adjacent channel power). The MRF5S910M is a 100 W, 900 MHz plastic RF power transistor that is optimized for GSM and GSM EDGE applications....

LISTED UNDER: Semiconductors, Transistors

MMIC Buffer Amplifier

July 8, 2003 11:09 am | Product Releases | Comments

Mimix Broadband announces a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three stage buffer amplifier, which can be operated with all three stages biased in parallel, or with independent bias for input and output stages as required to optimize performance. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this buffer amplifier covers the 16 to 30 GHz...

LISTED UNDER: Semiconductors, MMIC

Field Effect Transistors

July 2, 2003 9:47 am | Product Releases | Comments

Toshiba announces a 90-watt C-Band GaAs field effect transistor (FET). The TIM5964-90SL features output power of 49.5 dBm (typical) at a frequency range of 5.9 to 6.4 GHz. Gain (G1dB) is 7 dB typical. Drain current (IDS) is 18.0 A typical. IM3 is – 40 dBc typical at 43.5 dBm S.C.L. (949) 455-2000; www....

LISTED UNDER: Semiconductors, Transistors

Transistors

May 30, 2003 11:38 am | Product Releases | Comments

The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 μm × 1500 μm Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels....

LISTED UNDER: Semiconductors, Transistors

MMIC Mixers

May 30, 2003 11:38 am | Product Releases | Comments

These MMICs utilize Quad-MOSFET mixers and include integral RF and LO baluns within a 3 × 3 mm, six-pin, DFN, surface mount package. An external IF balun can be used to accommodate single-ended operation if a differential signal is not desired. These passive mixers do not require biasing and have a noise figure of 8 dB....

LISTED UNDER: Semiconductors, MMIC

RF Power Transistors

April 29, 2003 7:27 am | Product Releases | Comments

Motorola introduces its sixth generation of RF power transistors for GSM, EDGE, CDMA, and WCDMA base station amplifiers. These RF LDMOS devices help develop low cost, efficient cellular base stations for voice, data, and video transmissions. At 2.2 GHz, typical performance for a 90 watt (P1dB) device is: WCDMA output power is 17 watts; large signal gain is 17 dB; efficiency is 28....

LISTED UNDER: Semiconductors, Transistors

MMIC VCO

March 28, 2003 3:52 am | Product Releases | Comments

The HMC384LP4 is ideal for cellular/3G and broadband wireless data systems applications. This MMIC VCO requires no external components, consumes 35 mA from a single supply of +3 V, and provides +3.5 dBm buffered output power. The low phase noise performance of – 112 dBc/Hz at 100 kHz offset is excellent over temperature, shock, vibration, and process due to the monolithic structure of the oscillators....

LISTED UNDER: Semiconductors, MMIC

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