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Active Bias SiGe Gain Blocks

April 7, 2004 11:04 am | Product Releases | Comments

Sirenza introduces the low cost SGB product family. This family includes 6 SiGe HBT Darlington amplifiers, each of which incorporates an internally regulated bias circuit, thus eliminating the need for a bias-dropping resistor. The products are designed for low power consumption applications, operating from supply voltages of 3 to 5 V....

LISTED UNDER: Semiconductors, SiGe
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MMIC Switch

April 7, 2004 11:03 am | Product Releases | Comments

NEC's UPG2035T5F DPDT (Double Pole Double Throw) GaAs MMIC switch operates at frequencies of 2.4 to 2.5 GHz and 4.8 to 6 GHz, so it is suitable for antenna transfer switching between 802.11a and 802.11b/g. High isolation helps to reduce leakage between the Tx and Rx signals. High input power handling capability means higher linearity and lower distortion....

LISTED UNDER: Semiconductors, MMIC

SiGe Prescaler

February 2, 2004 8:06 am | Product Releases | Comments

Hittite introduces a standard product prescaler fabricated in SiGe. This Divide-by-4 is suited for high volume synthesizer applications in DBS/CATV, WLAN, Fixed Wireless, WLL, Cellular/3G, Microwave Radio and VSAT. The HMC426MS8 SiGe MMIC Divide-by-4 Prescaler operates from DC (with a square wave input) to 4 GHz input frequency, and accepts a input power range of 㪧 to +10 dBm....

LISTED UNDER: Semiconductors, SiGe

Cascadable SiGe Gain Block Amplifiers

February 2, 2004 8:06 am | Product Releases | Comments

Hittite announces the release of three plastic packaged SiGe MMIC Gain Block Amplifiers, the HMC476MP86, HMC479MP86, and HMC481MP86, which are suited for wireless infrastructure/handhelds, test equipment, microwave radio and military COTS applications from DC to 6 GHz. Across the product line small signal gain ranges from 15 to 20 dB at 1 GHz, and 13 to 18 dB at 2 GHz....

LISTED UNDER: Semiconductors, SiGe

Broadband MMIC Amplifiers

February 2, 2004 8:04 am | Product Releases | Comments

Mini-Circuits introduces the new family of 'LEE' MMIC Amplifiers. Highly reliable, extremely broad band, and very low in cost. These amplifiers have excellent electrical performance, with up to 17.3 dBm flat output power to 10 GHz. There are five models being introduced in this new Mini-Circuits family....

LISTED UNDER: Semiconductors, MMIC

Using ADS to Design an MMIC Amplifier

January 21, 2004 9:07 am | Product Releases | Comments

This application note illustrates, through the design of a MMIC amplifier, common problems faced in designing, simulating, and producing the physical layout of an MMIC circuit, as well as validation steps needed to verify that the physical layout produces the desired result. By Andy Howard The amplifier design process depends on a number of factors, including desired specifications, availability of device models, designer preferenc...

LISTED UNDER: Semiconductors, MMIC

Diodes

November 24, 2003 7:19 am | Product Releases | Comments

Vishay announces 120 diode devices in the SMF (DO219-AB) package, which measures 3.7 × 1.8 × 0.98. With a package height of 0.98 mm, the SMF (DO219-AB) package reduces space requirements and improves circuit board density. Vishay Semiconductors diode products include switching, fast switching, ultrafast switching, Schottky, ESD protection, and Zener diodes....

LISTED UNDER: Semiconductors, Diodes

InGaAs Photodiodes

November 24, 2003 7:19 am | Product Releases | Comments

OSI Fibercomm introduces 155 Mbps/622 Mbps InGaAs photo diodes with TIAs. The FCI-InGaAs-xxx series has active area sizes of 55 μm, 70 μm, and 120 μm. These sensors offer low noise with a spectral range of 900 nm to 1700 nm. The photodiodes exhibit high responsivity from 1100 nm to 1620 nm....

LISTED UNDER: Semiconductors, Diodes

Diodes and Drivers

November 24, 2003 7:19 am | Product Releases | Comments

PolarFab introduces two devices produced on its 8 inches PBC4 0.5 micron BiCMOS-DMS (BCD) process, the platinum silicide Schottky diode and a medium volt DMOS large angle body (MDL) device. The N-channel MDL features a 1.3 μm gate length, a threshold voltage (V t ) of 2.0 V and a maximum operating voltage (V max ) of 13....

LISTED UNDER: Semiconductors, Diodes

SiGe Extends Its Reach: <br>Power Amplifiers Supply Wireless and Cellular Applications

October 28, 2003 11:15 am | Product Releases | Comments

New engineering techniques allow SiGe to be used in high-power amplifiers for CDMA, GSM, and WLAN applications; enable the next generation of integration. By Jerry Loraine and Steve Kovacic, SiGe Semiconductor Silicon germanium (SiGe) has grown from a promising technology to a leading-edge solution for current and next-generation mobile devices, including cellular, wireless local area network (WLAN), and Bluetooth....

LISTED UNDER: Semiconductors, SiGe

Schottky Barrier Diodes

October 28, 2003 10:16 am | Product Releases | Comments

Torex Semiconductor Europe introduces two series of Schottky barrier diodes, the XB01SB04A2BR, and the XB0ASB03A1BR. The XB0ASB03A1BR, supplied in a SOD-323 package, has an average rectification current of 0.5 A and, when operating at 0.5 A, a forward voltage of 410 mV. Reverse voltage is 20 V and reverse current typically 35 μA....

LISTED UNDER: Semiconductors, Diodes

MMIC Amplifier

October 28, 2003 10:16 am | Product Releases | Comments

Mimix Broadband announces a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three stage buffer amplifier. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this buffer amplifier covers the 35 to 45 GHz frequency bands....

LISTED UNDER: Semiconductors, MMIC

GaAs MMIC Switches

October 28, 2003 10:16 am | Product Releases | Comments

Housed in NEC's low profile, flat lead TK package, the UPG2030TK measures 1.1 × 1.5 × 0.5 mm. The UPG2030TB is available in NEC's SOT-363 style TB package. Both versions deliver the same "no compromises" performance: frequency range is 0.5 to 2.5 GHz; P 1dB is +30 dBm typical @ 2....

LISTED UNDER: Switches, IC | Semiconductors, MMIC

MMIC Amplifier Application Note

September 2, 2003 8:37 am | Product Releases | Comments

Agilent Technologies announces an application note that details how to design an MMIC amplifier using Agilent's Advanced Design System (ADS) software. The 40-page document illustrates several common problems engineers face when designing, simulating and producing a physical layout of an MMIC circuit, as well as the validation steps needed to verify that the physical layout still produces the desired result....

LISTED UNDER: Semiconductors, MMIC

LDMOS Transistors

September 2, 2003 8:28 am | Product Releases | Comments

The LB501 is Polyfet's high power LDMOS single die LDMOS FET. The output power is rated at 175 watts @ 500 MHz with a minimum gain of 13 dB. It is targeted for operation in the 1 MHz to 600 MHz range. S-Parameters, Spice Models and Zin / Zout data is available. A 30 MHz to 512 MHz design example of this FETs capability is the TB167A demonstration amplifier....

LISTED UNDER: Semiconductors, Transistors

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