Advertisement

130 nm SiGe BiCMOS Processes Optimize Cost and Performance

June 19, 2007 11:51 am | Product Releases | Comments

HBTs feature a uniquely engineered fabrication process and new epitaxial materials optimized for wireless communications systems. David Cheskis, Ph.D., Jazz Semiconductor Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) are capable of much better performance than comparably sized CMOS devices....

LISTED UNDER: Semiconductors, SiGe

GaAs MMIC Mixers

March 13, 2007 12:50 pm | Product Releases | Comments

Hittite Microwave Corporation introduces two GaAs MMIC mixers, which are appropriate for Point-to-Point and Point-to-Multipoint Radios, VSAT, Telecom and Test Instrumentation from 6 to 34 GHz. The HMC144LH5 is a Double-Balanced MMIC Mixer which can be used as an upconverter or downconverter from 6 to 20 GHz and requires no external components or DC biasing....

LISTED UNDER: Semiconductors, MMIC

MMIC VCO w/Buffer Amplifier

March 13, 2007 12:50 pm | Product Releases | Comments

Hittite Microwave Corp. introduces its MMIC VCO which provides low phase noise and high output power for point-to-point, point-to-multipoint, VSAT, military and test equipment applications from 7.1 to 7.9 GHz. The HMC532LP4 (E) low noise VCO integrates the resonator, negative resistance generator, varactor diode and buffer amplifier....

LISTED UNDER: Semiconductors, MMIC
Advertisement

Richardson Electronics Will Distribute Avago Technologies’ RFICs, Transistors and Diodes

February 27, 2007 7:34 am | Product Releases | Comments

Richardson Electronics announces a North American Distribution Partnership with Avago Technologies, of San Jose, California, to distribute its complete line of RFIC, Transistor, Schottky and PIN Diode, and millimeter wave (mmW) products. Avago's extensive line of RF semiconductors provides solutions for numerous markets including Cellular base station, WLAN, WiMAX, GPS, ISM, RFID, and mmW including Radio Links, VSAT and Military....

LISTED UNDER: Semiconductors, Diodes | Semiconductors, Transistors

MMIC VCO Amplifier

February 26, 2007 10:55 am | Product Releases | Comments

Hittite Microwave Corporation introduces its model HMC532LP4 (E) MMIC VCO that provides low phase noise and high output power for point-to-point, point-to-multipoint, VSAT, military and test equipment applications from 7.1 to 7.9 GHz. This VCO integrates the resonator, negative resistance generator, varactor diode and buffer amplifier....

LISTED UNDER: Semiconductors, MMIC

SMT Packaged GaAs MMIC Receiver

February 9, 2007 5:02 am | Product Releases | Comments

Mimix Broadband, Inc. introduces an SMT packaged gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver comprised of a three stage, low noise amplifier followed by a single transistor "Tee" attenuator and an image reject fundamental resistive mixer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency....

LISTED UNDER: Semiconductors, MMIC

Gain Block MMIC Amplifier

January 30, 2007 12:11 pm | Product Releases | Comments

Hittite Microwave Corporation introduces a high linearity InGaP HBT Gain Block MMIC Amplifier which is suitable for IF and RF applications from DC to 4.5 GHz, including Cellular/PCS/3G, Broadband, WiBro and WiMAX. The HMC475ST89(E) is an InGaP HBT Gain Block MMIC Amplifier which operates from DC to 4....

LISTED UNDER: Semiconductors, MMIC

SiGe Medium-Power Discrete Component

October 19, 2006 8:40 am | Product Releases | Comments

Sirenza Microdevices announces the release of the Silicon Germanium (SiGe) high-linearity, medium power discrete product. The SGA-9089Z offers versatility and high performance from 50 to 4000 MHz. It can be biased from 2.7 to 3.3 V over a wide range of currents to deliver the optimum combination of linearity, noise figure and power up to 24 dBm....

LISTED UNDER: Semiconductors, SiGe
Advertisement

Mid-voltage Bipolar Transistors

October 19, 2006 8:40 am | Product Releases | Comments

Zetex Semiconductors introduces a range of mid-voltage bipolar transistors in the SOT23 package, capable of handling a power dissipation of up to 1.25 W. With the 3 × 2.5 mm footprint, these seven NPN and six PNP devices help to increase circuit power density by replacing the much larger DPAK, SOT89 and SOT223 packaged parts....

LISTED UNDER: Semiconductors, Transistors

SiGe Discrete

August 14, 2006 6:48 am | Product Releases | Comments

Sirenza Microdevices has announced its Silicon Germanium (SiGe) high linearity, medium power discrete product. The SGA-8543Z offers versatility and high performance from 50 to 3500 MHz. It can be biased from 2.7 to 3.3 V over a wide range of currents to deliver a combination of linearity, noise figure and power up to 20 dBm....

LISTED UNDER: Semiconductors, SiGe

Plastic Packaging for High-power RF Transistors

August 11, 2006 10:53 am | Product Releases | Comments

Freescale Semiconductor introduces 2 GHz high-power RF transistors housed in over-molded plastic packages that deliver performance comparable to air-cavity flange packages. The transistors are based on the company’s high-voltage, seventh-generation (HV7) RF Laterally Diffused Metal Oxide Semiconductor (LDMOS) technology....

LISTED UNDER: Semiconductors, Transistors

Technology Trends Supporting Millimeter-Wave MMIC Product Development

August 11, 2006 10:46 am | Product Releases | Comments

Established and emerging markets such as point-to-point radio and satellite communication systems pose significant challenges to existing GaAs millimeter wave MMIC technologies. Charles F. Campbell, Shuoqi Chen, Rached Hajji, Steve Brown and Dan Green Solid state Ka-band power amplifiers capable of efficiently producing multiple watts of saturated output power are required for VSAT ground terminal applications....

LISTED UNDER: Semiconductors, MMIC

Bipolar Transistors

July 10, 2006 9:59 am | Product Releases | Comments

A range of low voltage bipolar transistors from Zetex Semiconductors extends the power handling capability of the SOT23 package, enabling designers to shrink products by replacing SOT89 and SOT223 equivalent parts. Zetex is offering two NPN and two PNP devices, each capable of dissipating up to 1....

LISTED UNDER: Semiconductors, Transistors

Noise Diodes

February 2, 2006 9:20 am | Product Releases | Comments

NoiseWave announces the NW-Diode series broadband noise diodes. These noise diodes offer a symmetrical white Gaussian noise voltage distribution while maintaining a flat power spectral density versus frequency response. The series covers the frequency range 0.1 Hz to 11 GHz with high output ENR. The series is available in the following versions: axial leaded version for audio frequency applications; surface mount version for higher frequenc...

LISTED UNDER: Semiconductors, Diodes

SiGe Front-End IC

December 30, 2005 7:16 am | Product Releases | Comments

Atmel® announces the ATR0981, a Silicon Germanium (SiGe) based front-end IC. The use of SiGe technology and the device's operating frequency range (300 to 500 MHz) make possible a broad range of applications, from handheld family radios (private mobile radios, PMR) to meter readers. It is easy to design applications with low external component counts using this front-end device because of its high level of integration, including a power ...

LISTED UNDER: Semiconductors, SiGe

Pages

X
You may login with either your assigned username or your e-mail address.
The password field is case sensitive.
Loading