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Miniature Bipolar NPN/PNP Transistors Available in the SOT23FF Package

October 10, 2007 8:43 am | Product Releases | Comments

Now available in the SOT23FF package, Zetex Semiconductors’ miniature bipolar NPN and PNP transistors are well suited for MOSFET gate driving in newer power supplies. The transistors provide lower saturation voltage, higher current gain hold-up, improved circuit efficiency and cooler operation....

LISTED UNDER: Semiconductors, Transistors

Microwave Integrated Circuit (MMIC) Transmitter

September 26, 2007 8:17 am | Product Releases | Comments

Mimix Broadband, Inc. introduces a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) transmitter that delivers +14 dBm OIP3 and 5 dB conversion gain with +4 dBm LO drive level. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the transmitter covers the 32 to 45 GHz frequency bands and includes a balanced resistive mixer followed by a distributed amplifie...

LISTED UNDER: Semiconductors, MMIC

Single Pole Double Throw MMIC

September 26, 2007 8:17 am | Product Releases | Comments

CEL introduces the UPG2176T5N SPDT (Single Pole Double Throw) ultra-miniature GaAs MMIC switch delivers high power handling, high isolation and low insertion loss over the 2 to 6 GHz WiMAX bands. The UPG2176T5N is also good for engineers tasked with miniaturizing their designs. Housed in NEC’s 6-pin RoHS-compliant T5N package, it’s just 1....

LISTED UNDER: Semiconductors, MMIC
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Bipolar Junction Transistors

August 10, 2007 11:58 am | Product Releases | Comments

ON Semiconductor expands its low Vce(sat) bipolar junction transistors (BJTs) portfolio to include PNP and NPN devices that incorporate advanced silicon technology. These transistors deliver maximized power efficiency and longer battery life than traditional BJTs or planar MOSFETS. Suitable for a variety of portable applications, the low Vce(sat) BJTs are available in a multiple package options, including WDFN, SOT-23, SOT-223, SOT-563, Chi...

LISTED UNDER: Semiconductors, Transistors

130 nm SiGe BiCMOS Processes Optimize Cost and Performance

June 19, 2007 11:51 am | Product Releases | Comments

HBTs feature a uniquely engineered fabrication process and new epitaxial materials optimized for wireless communications systems. David Cheskis, Ph.D., Jazz Semiconductor Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) are capable of much better performance than comparably sized CMOS devices....

LISTED UNDER: Semiconductors, SiGe

GaAs MMIC Mixers

March 13, 2007 12:50 pm | Product Releases | Comments

Hittite Microwave Corporation introduces two GaAs MMIC mixers, which are appropriate for Point-to-Point and Point-to-Multipoint Radios, VSAT, Telecom and Test Instrumentation from 6 to 34 GHz. The HMC144LH5 is a Double-Balanced MMIC Mixer which can be used as an upconverter or downconverter from 6 to 20 GHz and requires no external components or DC biasing....

LISTED UNDER: Semiconductors, MMIC

MMIC VCO w/Buffer Amplifier

March 13, 2007 12:50 pm | Product Releases | Comments

Hittite Microwave Corp. introduces its MMIC VCO which provides low phase noise and high output power for point-to-point, point-to-multipoint, VSAT, military and test equipment applications from 7.1 to 7.9 GHz. The HMC532LP4 (E) low noise VCO integrates the resonator, negative resistance generator, varactor diode and buffer amplifier....

LISTED UNDER: Semiconductors, MMIC

Richardson Electronics Will Distribute Avago Technologies’ RFICs, Transistors and Diodes

February 27, 2007 7:34 am | Product Releases | Comments

Richardson Electronics announces a North American Distribution Partnership with Avago Technologies, of San Jose, California, to distribute its complete line of RFIC, Transistor, Schottky and PIN Diode, and millimeter wave (mmW) products. Avago's extensive line of RF semiconductors provides solutions for numerous markets including Cellular base station, WLAN, WiMAX, GPS, ISM, RFID, and mmW including Radio Links, VSAT and Military....

LISTED UNDER: Semiconductors, Diodes | Semiconductors, Transistors
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MMIC VCO Amplifier

February 26, 2007 10:55 am | Product Releases | Comments

Hittite Microwave Corporation introduces its model HMC532LP4 (E) MMIC VCO that provides low phase noise and high output power for point-to-point, point-to-multipoint, VSAT, military and test equipment applications from 7.1 to 7.9 GHz. This VCO integrates the resonator, negative resistance generator, varactor diode and buffer amplifier....

LISTED UNDER: Semiconductors, MMIC

SMT Packaged GaAs MMIC Receiver

February 9, 2007 5:02 am | Product Releases | Comments

Mimix Broadband, Inc. introduces an SMT packaged gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver comprised of a three stage, low noise amplifier followed by a single transistor "Tee" attenuator and an image reject fundamental resistive mixer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency....

LISTED UNDER: Semiconductors, MMIC

Gain Block MMIC Amplifier

January 30, 2007 12:11 pm | Product Releases | Comments

Hittite Microwave Corporation introduces a high linearity InGaP HBT Gain Block MMIC Amplifier which is suitable for IF and RF applications from DC to 4.5 GHz, including Cellular/PCS/3G, Broadband, WiBro and WiMAX. The HMC475ST89(E) is an InGaP HBT Gain Block MMIC Amplifier which operates from DC to 4....

LISTED UNDER: Semiconductors, MMIC

SiGe Medium-Power Discrete Component

October 19, 2006 8:40 am | Product Releases | Comments

Sirenza Microdevices announces the release of the Silicon Germanium (SiGe) high-linearity, medium power discrete product. The SGA-9089Z offers versatility and high performance from 50 to 4000 MHz. It can be biased from 2.7 to 3.3 V over a wide range of currents to deliver the optimum combination of linearity, noise figure and power up to 24 dBm....

LISTED UNDER: Semiconductors, SiGe

Mid-voltage Bipolar Transistors

October 19, 2006 8:40 am | Product Releases | Comments

Zetex Semiconductors introduces a range of mid-voltage bipolar transistors in the SOT23 package, capable of handling a power dissipation of up to 1.25 W. With the 3 × 2.5 mm footprint, these seven NPN and six PNP devices help to increase circuit power density by replacing the much larger DPAK, SOT89 and SOT223 packaged parts....

LISTED UNDER: Semiconductors, Transistors

SiGe Discrete

August 14, 2006 6:48 am | Product Releases | Comments

Sirenza Microdevices has announced its Silicon Germanium (SiGe) high linearity, medium power discrete product. The SGA-8543Z offers versatility and high performance from 50 to 3500 MHz. It can be biased from 2.7 to 3.3 V over a wide range of currents to deliver a combination of linearity, noise figure and power up to 20 dBm....

LISTED UNDER: Semiconductors, SiGe

Plastic Packaging for High-power RF Transistors

August 11, 2006 10:53 am | Product Releases | Comments

Freescale Semiconductor introduces 2 GHz high-power RF transistors housed in over-molded plastic packages that deliver performance comparable to air-cavity flange packages. The transistors are based on the company’s high-voltage, seventh-generation (HV7) RF Laterally Diffused Metal Oxide Semiconductor (LDMOS) technology....

LISTED UNDER: Semiconductors, Transistors

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