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Wideband SMT MMIC LNA Covers 18 to 31 GHz

September 8, 2008 6:45 am | Product Releases | Comments

Hittite Microwave Corporation announces its SMT MMIC wideband low noise amplifier (LNA) which covers test and measurement equipment, microwave radio and military EW applications. The HMC519LC4 GaAs pHEMT MMIC LNA is rated from 18 to 31 GHz, and it delivers 14-dB gain, a 3.5-dB noise figure and 24-dBm output IP3....

LISTED UNDER: Semiconductors, MMIC

Transistors Target Avionic and Radar Apps

September 5, 2008 5:47 am | Product Releases | Comments

Tyco Electronics’ MAPRST0912-50, MAPRST0912-350 and MAPR-000912-500S00 bipolar transistors perform in pulsed avionics and radar applications including air traffic control (ATC) systems, distance measurement equipment (DME) and identification friend or foe (IFF) systems. The 50 W peak MAPRST0912-50 offers a minimum gain of 9 dB and 40% minimum collector efficiency on a 50 V DC supply in driver stages in pulse power amplifier applications....

LISTED UNDER: Semiconductors, Transistors | Radar

MMIC Mixers Provide Broad Frequency Coverage

August 25, 2008 7:57 am | Product Releases | Comments

Hittite Microwave Corporation announces its family of GaAs MMIC fundamental mixers, I/Q mixers and sub-harmonic IRM mixers in chip form which provide broad frequency coverage from 19 to 90 GHz. These Velocium GaAs MMIC mixer products are suitable for use in a range of applications that include microwave radio, military and space, wideband communication systems, VSAT, SATCOM, automotive radar and test instrumentation....

LISTED UNDER: Semiconductors, MMIC
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High Power MMIC SPST Switch for Multi-Band Antenna Matching

June 16, 2008 10:52 am | Product Releases | Comments

PNS? California Eastern Laboratories unveils the Model UPG2189TB high-power SPST (single pole single throw) GaAs MMIC switch from NEC. Its ability to handle high GSM input power levels with low harmonic distortion makes the switch suitable for switching the tuning and matching elements in multi-band antennas....

LISTED UNDER: Semiconductors, MMIC

AWR and Triquint Announce Incentive Program for Building GaAs MMIC Designs

April 17, 2008 11:28 am | Product Releases | Comments

AWR® and TriQuint Semiconductor, Inc. a leading RF front-end product manufacturer and foundry services provider announces Project JumpStart, a program designed to provide first-time AWR and TriQuint customers with a low-cost introduction to the benefits of design and fabrication of gallium arsenide (GaAs) microwave monolithic integrated circuits (MMICs)....

LISTED UNDER: Semiconductors, MMIC

RF Power Transistors Function in Wireless Base Stations

April 11, 2008 9:47 am | Product Releases | Comments

TriQuint Semiconductor announces its RF LDMOS power transistor line that supports the needs of wireless telecommunications base stations and MMDS (multichannel multipoint distribution service) applications. RF power transistors based on silicon LDMOS function well in signal amplification for RF systems due to their high linearity, gain and efficiency....

LISTED UNDER: Semiconductors, Transistors

Wideband SMT MMIC LNA Covers DC to 20 GHz

April 3, 2008 10:53 am | Product Releases | Comments

Rated from DC to 20 GHz Delivers 14 dB Gain +16.5 dBm Output Power at 1 dB Compression Hittite Microwave Corporation announces its model HMC460LC5 SMT MMIC wideband low noise amplifier (LNA) that covers fiber optic, military EW, test and measurement equipment, and microwave radio applications from DC to 20 GHz....

LISTED UNDER: Semiconductors, MMIC

Passive GaAs MMIC Mixers Deliver a Wide IF Bandwidth

April 3, 2008 10:53 am | Product Releases | Comments

Hittite Microwave Corporation announces its double balanced GaAs MESFET mixers for use in test and measurement systems, military radios, commercial sensors and transceiver infrastructure, including critical functions of fixed and mobile protocols such as WiMAX and VSAT applications. The HMC557LC4 passive double balanced mixer provides an LO to RF port isolation of 48 dB and an input IP3 of +22 dBm across the frequency range of 2....

LISTED UNDER: Passives, Capacitors | Semiconductors, MMIC
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MMIC Phase Shifters Cover 2.5 to 18.5 GHz

January 22, 2008 5:53 am | Product Releases | Comments

Low insertion loss 5-bit and 6-bit MMIC phase shifters 360° phase shift Hittite Microwave Corporation introduces twelve new low insertion loss 5-bit and 6-bit MMIC Digital Phase Shifters which are appropriate for EW receivers, radar, satellite communications, and beamforming modules from 2....

LISTED UNDER: Semiconductors, MMIC

Three MMICs

November 20, 2007 5:30 am | Product Releases | Comments

Avago Technologies announced three MMICs designed to address the complex needs of test and measurement equipment applications for wireless networks. --> Avago Technologies announced three MMICs designed to address the complex needs of test and measurement equipment applications for wireless networks....

LISTED UNDER: Semiconductors, MMIC

SMT MMIC VCO Provides Low Phase Noise

November 15, 2007 7:48 am | Product Releases | Comments

Hittite Microwave Corp. introduces its SMT MMIC VCO which provides low phase noise and high output power for point-to-point, point-to-multipoint, VSAT, military and test equipment applications from 14.25 to 15.65 GHz. Due to the oscillator’s monolithic structure, the HMC632LP5(E) GaAs HBT MMIC provides optimal output power and phase noise performance over temperature....

LISTED UNDER: Semiconductors, MMIC

Miniature Bipolar NPN/PNP Transistors Available in the SOT23FF Package

October 10, 2007 8:43 am | Product Releases | Comments

Now available in the SOT23FF package, Zetex Semiconductors’ miniature bipolar NPN and PNP transistors are well suited for MOSFET gate driving in newer power supplies. The transistors provide lower saturation voltage, higher current gain hold-up, improved circuit efficiency and cooler operation....

LISTED UNDER: Semiconductors, Transistors

Microwave Integrated Circuit (MMIC) Transmitter

September 26, 2007 8:17 am | Product Releases | Comments

Mimix Broadband, Inc. introduces a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) transmitter that delivers +14 dBm OIP3 and 5 dB conversion gain with +4 dBm LO drive level. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the transmitter covers the 32 to 45 GHz frequency bands and includes a balanced resistive mixer followed by a distributed amplifie...

LISTED UNDER: Semiconductors, MMIC

Single Pole Double Throw MMIC

September 26, 2007 8:17 am | Product Releases | Comments

CEL introduces the UPG2176T5N SPDT (Single Pole Double Throw) ultra-miniature GaAs MMIC switch delivers high power handling, high isolation and low insertion loss over the 2 to 6 GHz WiMAX bands. The UPG2176T5N is also good for engineers tasked with miniaturizing their designs. Housed in NEC’s 6-pin RoHS-compliant T5N package, it’s just 1....

LISTED UNDER: Semiconductors, MMIC

Bipolar Junction Transistors

August 10, 2007 11:58 am | Product Releases | Comments

ON Semiconductor expands its low Vce(sat) bipolar junction transistors (BJTs) portfolio to include PNP and NPN devices that incorporate advanced silicon technology. These transistors deliver maximized power efficiency and longer battery life than traditional BJTs or planar MOSFETS. Suitable for a variety of portable applications, the low Vce(sat) BJTs are available in a multiple package options, including WDFN, SOT-23, SOT-223, SOT-563, Chi...

LISTED UNDER: Semiconductors, Transistors

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