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Plastic Packaging for High-power RF Transistors

August 11, 2006 10:53 am | Product Releases | Comments

Freescale Semiconductor introduces 2 GHz high-power RF transistors housed in over-molded plastic packages that deliver performance comparable to air-cavity flange packages. The transistors are based on the company’s high-voltage, seventh-generation (HV7) RF Laterally Diffused Metal Oxide Semiconductor (LDMOS) technology....

LISTED UNDER: Semiconductors, Transistors
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Technology Trends Supporting Millimeter-Wave MMIC Product Development

August 11, 2006 10:46 am | Product Releases | Comments

Established and emerging markets such as point-to-point radio and satellite communication systems pose significant challenges to existing GaAs millimeter wave MMIC technologies. Charles F. Campbell, Shuoqi Chen, Rached Hajji, Steve Brown and Dan Green Solid state Ka-band power amplifiers capable of efficiently producing multiple watts of saturated output power are required for VSAT ground terminal applications....

LISTED UNDER: Semiconductors, MMIC

Bipolar Transistors

July 10, 2006 9:59 am | Product Releases | Comments

A range of low voltage bipolar transistors from Zetex Semiconductors extends the power handling capability of the SOT23 package, enabling designers to shrink products by replacing SOT89 and SOT223 equivalent parts. Zetex is offering two NPN and two PNP devices, each capable of dissipating up to 1....

LISTED UNDER: Semiconductors, Transistors

Noise Diodes

February 2, 2006 9:20 am | Product Releases | Comments

NoiseWave announces the NW-Diode series broadband noise diodes. These noise diodes offer a symmetrical white Gaussian noise voltage distribution while maintaining a flat power spectral density versus frequency response. The series covers the frequency range 0.1 Hz to 11 GHz with high output ENR. The series is available in the following versions: axial leaded version for audio frequency applications; surface mount version for higher frequenc...

LISTED UNDER: Semiconductors, Diodes

SiGe Front-End IC

December 30, 2005 7:16 am | Product Releases | Comments

Atmel® announces the ATR0981, a Silicon Germanium (SiGe) based front-end IC. The use of SiGe technology and the device's operating frequency range (300 to 500 MHz) make possible a broad range of applications, from handheld family radios (private mobile radios, PMR) to meter readers. It is easy to design applications with low external component counts using this front-end device because of its high level of integration, including a power ...

LISTED UNDER: Semiconductors, SiGe

GaAs MMIC Amplifier

December 30, 2005 7:16 am | Product Releases | Comments

Mimix Broadband, Inc. announces the release of a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two-stage high power amplifier that integrates an on-chip temperature compensated output power detector. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this device covers the 30 to 36 GHz frequency bands and delivers 33 dBm OIP3 and 16 dB small signal gai...

LISTED UNDER: Semiconductors, MMIC

PIN Diodes

December 30, 2005 7:15 am | Product Releases | Comments

M/A-COM announces three additions to its existing line of packageless Surmount PIN diodes. The MA4SPS421, MA4SPS422 series devices and MA4PD-042005 series diodes provide good power performance for future platform mobile radio and military control circuit switch and attenuator applications for the 1 MHz to 18 GHz operating range....

LISTED UNDER: Semiconductors, Diodes

Hermetic SMT MMIC Components

December 8, 2005 6:11 am | Product Releases | Comments

Hittite Microwave Corporation announces four products that utilize the company’s high frequency LH5 leadless hermetic SMT package. The HMC441LH5 is a 7 to 15.5 GHz GaAs MMIC Medium Power Amplifier providing 15 dB gain and +21.5 dBm of saturated power at 25% PAE. For upconverter and downconverter applications from 7 to 14 GHz, the HMC141LH5 is a passive double-balanced mixer featuring LO to RF and LO to IF isolations of 35 dB, IF bandwidth o...

LISTED UNDER: Semiconductors, MMIC

SiGe BiCMOS Plays a Growing Role in the Mobile Platform

December 8, 2005 6:07 am | Product Releases | Comments

Lower costs and advancements in SiGe BiCMOS offer significant benefits to the wireless community. By Paul Kempf Glossary of Acronyms BiCMOS — Bipolar Complementary Metal-oxide Semiconductor CCK — Complementary Code Keying (RF modulation) CMOS — Complementary Metal Oxide Semiconductor COT — Customer-Owned Tooling E911 — Enhanced fT — Tr...

LISTED UNDER: Semiconductors, SiGe

MMIC SP3T Switch

November 1, 2005 9:58 am | Product Releases | Comments

California Eastern Laboratories announces the release of NEC’s new UPG2150T5L SP3T (Single Pole Triple Throw) switch. This high performance GaAs MMIC switch operates at 0.5 to 2.5 GHz and is housed in a new, miniature low profile 12-pin TSQFN package, measuring 2 mm square and 0.37 mm high. This provides real flexibility for size-constrained designs such as thin PCM cards and modules....

LISTED UNDER: Semiconductors, MMIC

SMT InGaP HBT MMIC VCOs

September 2, 2005 7:32 am | Product Releases | Comments

Hittite announces three GaAs HBT MMIC Voltage Controlled Oscillators (VCOs) for Point to Point/Multipoint, VSAT, Test Equipment and Industrial applications at 11, 12 & 24 GHz.The HMC513LP5, HMC514LP5, and HMC533LP4 are fully integrated InGaP HBT VCOs. These MMIC VCOs incorporate an integrated resonator, negative resistance device, and varactor diode, and exhibit desirable phase noise performance over temperature, shock, and process due to t...

LISTED UNDER: Semiconductors, MMIC

Surface-Mount PIN Photodiodes

August 3, 2005 6:38 am | Product Releases | Comments

Vishay announces four high-performance PIN photodiodes that offer high sensitivity in a surface-mount package measuring 4.24 × 5.0 mm with a 1.12 mm height profile. These additions to Vishay Semiconductors’ TEMD5xxx line of PIN photodiodes combine high-speed response and excellent sensitivity, enabled by optional daylight filtering and a choice of two large radiant-sensitive areas measuring 7....

LISTED UNDER: Semiconductors, Diodes

Silicon Transistors

August 3, 2005 6:38 am | Product Releases | Comments

CEL announces that NEC has released a low profile M33 that measures 0.64 mm × 0.84 mm × 0.4 mm (including leads) and houses a series of NEC Silicon and Silicon Germanium devices developed specifically for VCO module applications. Available are the NE685M33 and NE851M33 Silicon Bipolars and the NESG2107M33 Silicon Germanium transistor....

LISTED UNDER: Semiconductors, Transistors

MMIC Distributed Amplifier

August 3, 2005 6:33 am | Product Releases | Comments

Mimix Broadband, Inc. introduces a GaAs MMIC distributed amplifier that can be used as an ultra wideband amplifier or a fiber optic modulator driver. Using 0.15 micron gate length GaAs pHEMT device model technology, this distributed amplifier covers the 0.05 to 50 GHz frequency bands. The device has a small signal gain of 9 dB with noise figure of 5 dB across the band....

LISTED UNDER: Semiconductors, MMIC

pHEMT Transistors

August 3, 2005 6:33 am | Product Releases | Comments

TriQuint Semiconductor announces ten discrete Power pHEMT transistor devices for a variety of amplifier applications including aerospace, digital radio or wireless basestations. These devices, utilizing the company’s 0.35µ power pHEMT production process, offer impressive power, gain and efficiency performance and are suited for L- through Ku-band high power amplifiers....

LISTED UNDER: Semiconductors, Transistors

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