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GaAs MMIC Power Amplifier Delivers 5 W Output Power

May 4, 2009 11:28 am | Product Releases | Comments

Mimix Broadband, Inc. has released a GaAs MMIC high power amplifier (HPA) with +37 dBm saturated output power and 27 dB small signal gain. This HPA, identified as XP1058-BD, uses a dual-sided bias architecture, covers 14.5 to 16 GHz, and achieves +44 dBm OIP3. The device is well suited for millimeter-wave military, radar, satellite and weather applications....

LISTED UNDER: Semiconductors, MMIC

Mini MMIC Amplifier Delivers 38 dB Gain

March 31, 2009 7:37 am | Product Releases | Comments

Mini MMIC amplifier California Eastern Laboratories announces its Model UPC3236TK NEC medium power silicon amplifier that delivers 38 dB of gain flat from 250 MHz to 2.6 GHz, making it suitable for use as a wideband IF amplifier in DBS LNB down converters. With its high linearity and optimal reverse isolation, this amplifier is also useful as a wideband gain block or as a buffer amplifier following a VCO....

LISTED UNDER: Semiconductors, MMIC

34 to 37 GHz GaAs MMIC Power Amplifier Achieves 24% PAE

March 19, 2009 11:55 am | Product Releases | Comments

Mimix Broadband, Inc. has released a GaAs MMIC high power amplifier (HPA) with +37 dBm pulsed saturated output power and 22 dB large signal gain. This HPA, identified as XP1073-BD, covers 34 to 37 GHz and achieves 24% power added efficiency (PAE). The device is well suited for millimeter-wave military, radar, satellite and weather applications....

LISTED UNDER: Semiconductors, MMIC
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Microwave Transistors Work in Telecom Applications

March 6, 2009 6:56 am | Product Releases | Comments

Cree, Inc. announces the sample release of 2 120 W GaN HEMT microwave transistors for telecommunication applications, such as W-CDMA, LTE and WiMAX. Due to the combination of high RF power density, low capacitance and high thermal conductivity silicon carbide (SiC) substrates, these transistors are said to provide ultimate performance compared to other technologies, such as GaAs MESFET or Si LDMOSFET....

LISTED UNDER: Semiconductors, Transistors

Coupler Functions in GaN MMIC Devices

February 25, 2009 10:46 am | Product Releases | Comments

Innovative Power Products' Model IPP-4011 transforming 90º hybrid coupler combines two signals of up to 300 W CW total output power in GaN MMIC devices with 25 W input and output impedances. The 2.20Ω × 0.80Ω × 0.23Ω drop-in-style-packaged device offers two ports at 50 ? impedance and two ports at 25Ω impedance....

LISTED UNDER: Semiconductors, MMIC

Power Transistors Operate in UHF Applications

February 25, 2009 10:46 am | Product Releases | Comments

HVVi Semiconductors, Inc. announces its Model HVV0405-175 power transistor, using the high voltage vertical field effect transistor architecture for radar applications in the UHF band. Operating across the 420 to 470 MHz band, the device offers UHF system designers a fully qualified 175 W RF power transistor with optimal gain and ruggedness specifications....

LISTED UNDER: Semiconductors, Transistors

Microwave Transistors Serve Telecom Applications

January 30, 2009 10:52 am | Product Releases | Comments

Cree's CGH21120F and CGH25120F GaN HEMT microwave transistors perform in telecommunication applications, such as W-CDMA, LTE and WiMAX. The components consist of single, input-pre-matched GaN HEMT devices providing >120 W of saturated power in industry-standard ceramic-metal packages. The CGH21120F is designed for frequencies from 1,800 to 2,300 MHz, while the CGH25120F is optimized for frequencies from 2,300 to 2,700 MHz....

LISTED UNDER: Semiconductors, Transistors

GaAs pHEMT MMIC Amplifiers Cover 18 to 34 GHz

December 18, 2008 7:11 am | Product Releases | Comments

Hittite Microwave Corporation introduces two GaAs pHEMT MMIC amplifiers for use in point-to-point and point-to-multipoint radio, military and space, VSAT, sensors and test equipment applications from 18 to 34 GHz. The HMC693 is a two-stage GaAs pHEMT 1 W power amplifier MMIC that operates between 27 and 34 GHz....

LISTED UNDER: Semiconductors, MMIC
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LDMOS RF Power Transistors Meet Commercial Aerospace Requirements

December 18, 2008 7:11 am | Product Releases | Comments

Freescale Semiconductor introduces its MRF6V4300N high-performance laterally diffused metal oxide semiconductor (LDMOS) RF power transistor that is optimized for HF to UHF communications. This power transistor is suitable for a range of applications, including radar and air traffic management systems since it provides high gain and efficiency....

LISTED UNDER: Military-Aerospace | Semiconductors, Transistors

MMIC Amplifiers Target Microwave/Millimeterwave Radios

November 21, 2008 10:08 am | Product Releases | Comments

Hittite Microwave’s HMC451LP3E and HMC-ABH264 GaAs PHEMT MMIC amplifiers work in point-to-point and point-to-multipoint radios, as well as VSAT, military and space, fiber optics, sensor, and test instrumentation applications. The RoHS-compliant HMC451LP3E operates from 5 GHz to 18 GHz with 18-dB gain, 21-dBm saturated output power at 18% PAE, and 28-dBm output IP3 in a temperature range from -40°C to 85°C....

LISTED UNDER: Semiconductors, MMIC

Up/Down Converter MMICs Cover 700 MHz to 3.9 GHz

November 10, 2008 11:23 am | Product Releases | Comments

Hittite Microwave Corporation announces seven SiGe BiCMOS MMIC mixer RFICs which are suitable for up-conversion and down-conversion applications in broadband, cellular/3G, WiMAX/4G and fixed wireless systems from 700 MHz to 3.9 GHz. The HMC684LP4E, HMC685LP4E, HMC688LP4E and HMC666LP4E are SiGe BiCMOS mixer RFICs which are rated from 0....

LISTED UNDER: Semiconductors, MMIC

MMIC Multiplier Uses GaAs PHEMT Technology

October 9, 2008 6:03 am | Product Releases | Comments

Hittite Microwave Corporation introduces its Model HMC598 GaAs MMIC Active x2 Frequency Multiplier chip which allows radio designers to achieve continuous output frequency coverage from 22 to 46 GHz. This multiplier also provides optimal fundamental and sub-harmonic suppression in clock generation, point-to-point radio, military and space, VSAT and test equipment applications....

LISTED UNDER: Semiconductors, MMIC

HV-HBT Transistors Provide RF Solution

September 8, 2008 6:45 am | Product Releases | Comments

TriQuint Semiconductor releases two HV-HBT (high voltage-heterojunction bipolar transistor) devices that are efficient and highly linear. When paired with proprietary high power HBT devices, they provide a complete RF solution for 3G/4G high power amplifier (HPA) mobile infrastructure designs. These relatively low power HBT devices are suitable as pre-drivers and drivers....

LISTED UNDER: Semiconductors, Transistors

Wideband SMT MMIC LNA Covers 18 to 31 GHz

September 8, 2008 6:45 am | Product Releases | Comments

Hittite Microwave Corporation announces its SMT MMIC wideband low noise amplifier (LNA) which covers test and measurement equipment, microwave radio and military EW applications. The HMC519LC4 GaAs pHEMT MMIC LNA is rated from 18 to 31 GHz, and it delivers 14-dB gain, a 3.5-dB noise figure and 24-dBm output IP3....

LISTED UNDER: Semiconductors, MMIC

Non-Reflective MMIC SP4T Covers DC to 18 GHz

September 8, 2008 6:45 am | Product Releases | Comments

Hittite Microwave Corporation announces its GaAs pHEMT SP4T (single pole, four throw) MMIC switch which is suitable for automotive, industrial sensors, test and measurement, microwave radio, military and space applications from DC to 18 GHz. The HMC641 is a wideband, non-reflective SP4T switch that exhibits insertion loss of 2 dB and isolation of 42 dB at midband and it features an on-chip binary decoder which requires only two control line...

LISTED UNDER: Semiconductors, MMIC

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