Mimix Asia introduces a 2.7 to 3.8 GHz GaAs MMIC power amplifier that has 32 dB large signal gain and 41.5 dBm saturated output power. Identified as XP5002BD, this device includes on-chip gate bias circuitry and delivers 40% power added efficiency. The XP5002-BD is well suited for radar, satellite and commercial applications....LISTED UNDER: Semiconductors, MMIC
\ Mimix Asia, a subsidiary of Mimix Broadband, Inc., introduces a 7 to 13 GHz GaAs MMIC 6-bit phase shifter with LVCMOS/TTL compatible digital control. Identified as XS1000-BD, this device has digitally controlled 6-bit operation and a least significant bit (LSB) of 5.625°. The XS1000-BD delivers +25 dBm P1dB input compression and is well suited for beamforming, EW receivers, military and weather radar, and SATCOM applications.LISTED UNDER: Semiconductors, MMIC
Mini-Circuits’ PMA-545+ is a E-PHEMT based ultra-low noise MMIC amplifier operating from 100 MHz to 6 GHz with a unique combination of low noise and high IP3 making this amplifier appropriate for sensitive receiver applications. This design operates on a single 3 V supply and is internally matched to 50 Ohms.LISTED UNDER: Semiconductors, MMIC
Mini-Circuits PHA-1+ Ultra high dynamic range MMIC amplifier supports low intermodulation amplification over the broad frequency range of 50 MHz to 6 GHz. This design provides a unique combination of high Output IP3 (typically +42 dBm) while maintaining a noise figure less than 3 dB up to 4 GHz and typical gain of 14 dB at 2 GHz.LISTED UNDER: Semiconductors, MMIC
SAN DIEGO & NEWPORT BEACH, Calif.--(BUSINESS WIRE) -- The University of California, San Diego (UCSD), provider of a leading program in microwave and millimeter-wave RFICs and mixed-signal, and Jazz Semiconductor®, a Tower Group Company today announced that they have collaborated to develop a two-antenna quad-beam RFIC phased array receiver covering the 11-15 GHz frequency range....LISTED UNDER: Semiconductors, SiGe
Diverse modulation formats and sampling rates between various standards make designing common building blocks challenging. Deepak Boppana, Altera Corporation click to enlarge Figure 1. Farrow Filter Structure. Remote radio heads (RRH) technology with support for simultaneous operation of multiple air-interface protocols is an emerging product requirement for operators.
Agilent Technologies Inc. introduces its Advanced Design System 2009 Update 1, a complete, front-to-back solution for monolithic microwave integrated circuit (MMIC) and RF module design. The release integrates 3-D electromagnetic (EM) analysis, wireless standards-based design verification libraries, X-parameter simulation, and statistical design and yield optimization....LISTED UNDER: Semiconductors, MMIC
Freescale Semiconductor has expanded on its commitment to GSM EDGE wireless networks with the introduction of three high-performance RF power transistors based on laterally-diffused metal oxide semiconductor (LDMOS) technology. The devices incorporate enhancements that make them easy to integrate into amplifiers while delivering exceptional levels of performance....LISTED UNDER: Semiconductors, Transistors
NEC's UPG2193T6E Single Pole Eight Throw (SP8T) GaAs MMIC antenna switch was developed specifically to meet the needs of new 3G UMTS, W-CDMA and Quad Band EDGE mobile phone designs. The UPG2193T6E was developed to meet the industry's need to replace the common two-switch solution with a single miniature device.LISTED UNDER: Semiconductors, MMIC
Mimix Broadband, Inc. introduces a GaAs MMIC high power amplifier (HPA) with +41 dBm pulsed saturated output power and 17 dB small signal gain. This HPA, identified as XP1057-BD, uses a dual sided bias architecture, covers 13.5 to 16 GHz and achieves +48 dBm OIP3. The device is well suited for millimeter-wave military, radar, satellite and weather applications....LISTED UNDER: Semiconductors, MMIC
Mimix Broadband, Inc. has released a GaAs MMIC high power amplifier (HPA) with +37 dBm saturated output power and 27 dB small signal gain. This HPA, identified as XP1058-BD, uses a dual-sided bias architecture, covers 14.5 to 16 GHz, and achieves +44 dBm OIP3. The device is well suited for millimeter-wave military, radar, satellite and weather applications....LISTED UNDER: Semiconductors, MMIC
By Svenn-Tore Larsen, Chief Executive Officer, Nordic Semiconductor Like many organizations in today's electronics sector, my company, Nordic Semiconductor, is rising to the challenge of operating in a global semiconductor market that analysts say could drop by around 20 percent this year compared to 2008.
Mini MMIC amplifier California Eastern Laboratories announces its Model UPC3236TK NEC medium power silicon amplifier that delivers 38 dB of gain flat from 250 MHz to 2.6 GHz, making it suitable for use as a wideband IF amplifier in DBS LNB down converters. With its high linearity and optimal reverse isolation, this amplifier is also useful as a wideband gain block or as a buffer amplifier following a VCO....LISTED UNDER: Semiconductors, MMIC
Mimix Broadband, Inc. has released a GaAs MMIC high power amplifier (HPA) with +37 dBm pulsed saturated output power and 22 dB large signal gain. This HPA, identified as XP1073-BD, covers 34 to 37 GHz and achieves 24% power added efficiency (PAE). The device is well suited for millimeter-wave military, radar, satellite and weather applications....LISTED UNDER: Semiconductors, MMIC
Cree, Inc. announces the sample release of 2 120 W GaN HEMT microwave transistors for telecommunication applications, such as W-CDMA, LTE and WiMAX. Due to the combination of high RF power density, low capacitance and high thermal conductivity silicon carbide (SiC) substrates, these transistors are said to provide ultimate performance compared to other technologies, such as GaAs MESFET or Si LDMOSFET....LISTED UNDER: Semiconductors, Transistors