LDMOS Power Transistors Deliver Higher Gain, Greater Efficiency in Mismatched Applications

November 16, 2010 6:00 am | Product Releases | Comments

Freescale Semiconductor recently unveiled three advanced industrial RF power transistors at an ideal price/performance ratio for original equipment manufacturers (OEMs). The enhanced rugged capability combined with leading-edge RF performance enables OEMs to realize significant cost savings at the system level for industrial and commercial aerospace designs....

LISTED UNDER: Semiconductors, Transistors

Miniature Varactor Diodes for WLAN, CATV, LNB and Energy Management

October 12, 2010 7:48 am | Product Releases | Comments

Skyworks announces three miniature 0402 varactor diodes for WLAN, CATV, LNB, energy management, medical, wireless infrastructure and military markets. These small-form factor, discrete, low-profile plastic diodes are contained within SMT packaging that is ideal for voltage controlled oscillator (VCO), phase shifter and voltage tuned filter applications requiring a high Q and low resistance varactor with a large capacitance change over a ...

LISTED UNDER: Semiconductors, Diodes

DC to 20 GHz GaAs MMIC Distributed PA

October 5, 2010 10:19 am | Product Releases | Comments

Endwave Corporation has announced its Model EWH2001ZZ distributed power amplifier (PA) for commercial, industrial, and military applications from DC to 20 GHz. Based on GaAs pseudomorphic high-electron-mobility-transistor (pHEMT) technology, the monolithic-microwave-integrated-circuit (MMIC) distributed PA delivers +26 dBm typical output power at 1-dB compression (P1dB) through 12 GHz and typically +23 dBm through 20 GHz....

LISTED UNDER: Semiconductors, MMIC

Miniature 0402 Diodes for High Volume Commercial and Industrial OEMs, ODMs and Contract Manufacturers

September 28, 2010 9:34 am | Product Releases | Comments

Skyworks Solutions, Inc. has introduced four miniature 0402 diodes for high volume commercial and industrial original equipment manufacturers (OEMs), original device manufacturers (ODMs) and contract manufacturers (CMs) – all of which are offered in a low profile, plastic surface mount technology (SMT) package....

LISTED UNDER: Industrial | Semiconductors, Diodes

GaAs MMIC Upconverter Covers 17.7 to 23.6 GHz

June 21, 2010 5:27 am | Product Releases | Comments

Hittite Microwave Corporation has introduced a new SMT packaged GaAs MMIC sub-harmonic upconverter which is well suited for point-to-point radio, satellite communications, test & measurement, sensors, military radar, EW and ELINT applications from 17.7 to 23.6 GHz. The HMC711LC5 delivers a small signal conversion gain of 15 dB and wide IF bandwidth of DC to 3.

LISTED UNDER: Semiconductors, MMIC

180 nm Ultra CMOS Process

June 10, 2010 11:34 am | Product Releases | Comments

Peregrine Semiconductor Corporation has entered in an exclusive agreement with IBM for the development and manufacture of future generations of Peregrine’s patented UltraCMOS™ silicon-on-sapphire (SOS) process technology, the industry’s highest-performance radio frequency complementary metal-oxide semiconductor (RF CMOS) process.

Online Design Exploration Environment Launched for Small-Signal RF Transistors

May 17, 2010 10:42 am | Product Releases | Comments

NIJMEGEN, THE NETHERLANDS; PORTLAND, OR; and EL SEGUNDO, CA –- AWR®, Transim Technology and NXP Semiconductors recently announced the launch of the NXP SimPort Design Center for online design exploration of NXP’s small-signal RF transistors. The SimPort Design Center provides a variety of online design solutions across NXP’s product portfolio and features an “interactive datasheet” for small-signal RF transistors....

LISTED UNDER: Semiconductors, Transistors

High Performance GaAs MMIC Upconverter Covers 17.7 to 23.6 GHz

May 14, 2010 10:01 am | Product Releases | Comments

Hittite Microwave Corporation introduces a SMT packaged GaAs MMIC Sub-Harmonic Upconverter which is well suited for point-to-point radio, satellite communications, test & measurement, sensors, military radar, EW and ELINT applications from 17.7 to 23.6 GHz. The HMC711LC5 is a GaAs MMIC Sub-Harmonic upconverter which delivers a small signal conversion gain of 15 dB and wide IF bandwidth of DC to 3....

LISTED UNDER: Semiconductors, MMIC

Highly-Integrated GaAs MMIC Up-Converter Available in 4 x 4 mm QFN Package

April 8, 2010 1:19 pm | Product Releases | Comments

Now available from Mimix Broadband, Inc. is a 5.6 to 10.5 GHz GaAs MMIC up-converter that integrates a double balanced image reject mixer, LO buffer amplifier, RF buffer amplifier and variable attenuator, all within a fully molded 4x4mm QFN package. This RoHS-compliant, packaged up-converter has an output third order intercept point (OIP3) of +25 dBm, a conversion gain of 8 dB and a typical image rejection of 15 dBc.

LISTED UNDER: Semiconductors, MMIC

Ultra-low VF Power Schottky Diodes Suited for High-frequency Switched-mode Power Supplies

March 1, 2010 7:38 am | Product Releases | Comments

With the increase of environmental awareness, efficiency is now one of the main selling points for power supply and computer manufacturers. Following this trend, ST is releasing a new family of high-performance power Schottky rectifiers. The STPS50U100C is the first member of this new family. It is a dual 50 A, 100 V power Schottky rectifier, suited for high-frequency switched-mode power supplies....

LISTED UNDER: Power, Supplies | Semiconductors, Diodes

Plastic SMT Schottky Mixer/Detector Diodes

February 8, 2010 7:30 am | Product Releases | Comments

Aeroflex/Metelics introduces a family of surface mount GaAs and Silicon Schottky Mixer/Detector Diodes for high volume pick and place applications. These control devices are delivered in a plastic SMT package with standard 45 mils W X 75 mils L X 31 mils H dimensions. Their performance and mechanicals allow them to be easily dropped into existing designs.

LISTED UNDER: Semiconductors, Diodes

GaAs MMIC Delivers 32 dB Gain and Includes On-Chip Gate Bias Circuitry

January 22, 2010 10:01 am | Product Releases | Comments

Mimix Asia introduces a 2.7 to 3.8 GHz GaAs MMIC power amplifier that has 32 dB large signal gain and 41.5 dBm saturated output power. Identified as XP5002BD, this device includes on-chip gate bias circuitry and delivers 40% power added efficiency. The XP5002-BD is well suited for radar, satellite and commercial applications....

LISTED UNDER: Semiconductors, MMIC

GaAs MMIC Offers 5.625º Least Significant Bit (LSB) Phase Shift

December 14, 2009 11:48 am | Product Releases | Comments

\ Mimix Asia, a subsidiary of Mimix Broadband, Inc., introduces a 7 to 13 GHz GaAs MMIC 6-bit phase shifter with LVCMOS/TTL compatible digital control. Identified as XS1000-BD, this device has digitally controlled 6-bit operation and a least significant bit (LSB) of 5.625°. The XS1000-BD delivers +25 dBm P1dB input compression and is well suited for beamforming, EW receivers, military and weather radar, and SATCOM applications.

LISTED UNDER: Semiconductors, MMIC

E-PHEMT MMIC Amplifier Combines Low Noise and High IP3

August 3, 2009 11:41 am | Product Releases | Comments

Mini-Circuits’ PMA-545+ is a E-PHEMT based ultra-low noise MMIC amplifier operating from 100 MHz to 6 GHz with a unique combination of low noise and high IP3 making this amplifier appropriate for sensitive receiver applications. This design operates on a single 3 V supply and is internally matched to 50 Ohms.

LISTED UNDER: Semiconductors, MMIC

High Dynamic Range MMIC Amplifier

August 3, 2009 9:13 am | Product Releases | Comments

Mini-Circuits PHA-1+ Ultra high dynamic range MMIC amplifier supports low intermodulation amplification over the broad frequency range of 50 MHz to 6 GHz. This design provides a unique combination of high Output IP3 (typically +42 dBm) while maintaining a noise figure less than 3 dB up to 4 GHz and typical gain of 14 dB at 2 GHz.

LISTED UNDER: Semiconductors, MMIC


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