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GaAs MMIC Delivers 32 dB Gain and Includes On-Chip Gate Bias Circuitry

January 22, 2010 10:01 am | Product Releases | Comments

Mimix Asia introduces a 2.7 to 3.8 GHz GaAs MMIC power amplifier that has 32 dB large signal gain and 41.5 dBm saturated output power. Identified as XP5002BD, this device includes on-chip gate bias circuitry and delivers 40% power added efficiency. The XP5002-BD is well suited for radar, satellite and commercial applications....

LISTED UNDER: Semiconductors, MMIC
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GaAs MMIC Offers 5.625º Least Significant Bit (LSB) Phase Shift

December 14, 2009 11:48 am | Product Releases | Comments

\ Mimix Asia, a subsidiary of Mimix Broadband, Inc., introduces a 7 to 13 GHz GaAs MMIC 6-bit phase shifter with LVCMOS/TTL compatible digital control. Identified as XS1000-BD, this device has digitally controlled 6-bit operation and a least significant bit (LSB) of 5.625°. The XS1000-BD delivers +25 dBm P1dB input compression and is well suited for beamforming, EW receivers, military and weather radar, and SATCOM applications.

LISTED UNDER: Semiconductors, MMIC

E-PHEMT MMIC Amplifier Combines Low Noise and High IP3

August 3, 2009 11:41 am | Product Releases | Comments

Mini-Circuits’ PMA-545+ is a E-PHEMT based ultra-low noise MMIC amplifier operating from 100 MHz to 6 GHz with a unique combination of low noise and high IP3 making this amplifier appropriate for sensitive receiver applications. This design operates on a single 3 V supply and is internally matched to 50 Ohms.

LISTED UNDER: Semiconductors, MMIC

High Dynamic Range MMIC Amplifier

August 3, 2009 9:13 am | Product Releases | Comments

Mini-Circuits PHA-1+ Ultra high dynamic range MMIC amplifier supports low intermodulation amplification over the broad frequency range of 50 MHz to 6 GHz. This design provides a unique combination of high Output IP3 (typically +42 dBm) while maintaining a noise figure less than 3 dB up to 4 GHz and typical gain of 14 dB at 2 GHz.

LISTED UNDER: Semiconductors, MMIC

High Speed SiGe Process Replaces 8 GaAs Chips, Lowering Cost and Increasing Integration

July 2, 2009 9:00 am | Product Releases | Comments

SAN DIEGO & NEWPORT BEACH, Calif.--(BUSINESS WIRE) -- The University of California, San Diego (UCSD), provider of a leading program in microwave and millimeter-wave RFICs and mixed-signal, and Jazz Semiconductor®, a Tower Group Company today announced that they have collaborated to develop a two-antenna quad-beam RFIC phased array receiver covering the 11-15 GHz frequency range....

LISTED UNDER: Semiconductors, SiGe

First Complete, Front-to-Back Solution for MMIC, RF Module Design

June 11, 2009 5:07 am | Product Releases | Comments

Agilent Technologies Inc. introduces its Advanced Design System 2009 Update 1, a complete, front-to-back solution for monolithic microwave integrated circuit (MMIC) and RF module design. The release integrates 3-D electromagnetic (EM) analysis, wireless standards-based design verification libraries, X-parameter simulation, and statistical design and yield optimization....

LISTED UNDER: Semiconductors, MMIC

RF Power LDMOS Transistors Deliver Ease-of-Integration Features and High Efficiency

June 9, 2009 12:36 pm | Product Releases | Comments

Freescale Semiconductor has expanded on its commitment to GSM EDGE wireless networks with the introduction of three high-performance RF power transistors based on laterally-diffused metal oxide semiconductor (LDMOS) technology. The devices incorporate enhancements that make them easy to integrate into amplifiers while delivering exceptional levels of performance....

LISTED UNDER: Semiconductors, Transistors

GaAs MMIC Antenna Switch Supports Multi-band Transceiver Platforms

May 26, 2009 6:59 am | Product Releases | Comments

NEC's UPG2193T6E Single Pole Eight Throw (SP8T) GaAs MMIC antenna switch was developed specifically to meet the needs of new 3G UMTS, W-CDMA and Quad Band EDGE mobile phone designs. The UPG2193T6E was developed to meet the industry's need to replace the common two-switch solution with a single miniature device.

LISTED UNDER: Semiconductors, MMIC

GaAs MMIC Power Amp Delivers 10 W Output Power

May 26, 2009 6:59 am | Product Releases | Comments

Mimix Broadband, Inc. introduces a GaAs MMIC high power amplifier (HPA) with +41 dBm pulsed saturated output power and 17 dB small signal gain. This HPA, identified as XP1057-BD, uses a dual sided bias architecture, covers 13.5 to 16 GHz and achieves +48 dBm OIP3. The device is well suited for millimeter-wave military, radar, satellite and weather applications....

LISTED UNDER: Semiconductors, MMIC

GaAs MMIC Power Amplifier Delivers 5 W Output Power

May 4, 2009 11:28 am | Product Releases | Comments

Mimix Broadband, Inc. has released a GaAs MMIC high power amplifier (HPA) with +37 dBm saturated output power and 27 dB small signal gain. This HPA, identified as XP1058-BD, uses a dual-sided bias architecture, covers 14.5 to 16 GHz, and achieves +44 dBm OIP3. The device is well suited for millimeter-wave military, radar, satellite and weather applications....

LISTED UNDER: Semiconductors, MMIC

Mini MMIC Amplifier Delivers 38 dB Gain

March 31, 2009 7:37 am | Product Releases | Comments

Mini MMIC amplifier California Eastern Laboratories announces its Model UPC3236TK NEC medium power silicon amplifier that delivers 38 dB of gain flat from 250 MHz to 2.6 GHz, making it suitable for use as a wideband IF amplifier in DBS LNB down converters. With its high linearity and optimal reverse isolation, this amplifier is also useful as a wideband gain block or as a buffer amplifier following a VCO....

LISTED UNDER: Semiconductors, MMIC

34 to 37 GHz GaAs MMIC Power Amplifier Achieves 24% PAE

March 19, 2009 11:55 am | Product Releases | Comments

Mimix Broadband, Inc. has released a GaAs MMIC high power amplifier (HPA) with +37 dBm pulsed saturated output power and 22 dB large signal gain. This HPA, identified as XP1073-BD, covers 34 to 37 GHz and achieves 24% power added efficiency (PAE). The device is well suited for millimeter-wave military, radar, satellite and weather applications....

LISTED UNDER: Semiconductors, MMIC

Microwave Transistors Work in Telecom Applications

March 6, 2009 6:56 am | Product Releases | Comments

Cree, Inc. announces the sample release of 2 120 W GaN HEMT microwave transistors for telecommunication applications, such as W-CDMA, LTE and WiMAX. Due to the combination of high RF power density, low capacitance and high thermal conductivity silicon carbide (SiC) substrates, these transistors are said to provide ultimate performance compared to other technologies, such as GaAs MESFET or Si LDMOSFET....

LISTED UNDER: Semiconductors, Transistors

Coupler Functions in GaN MMIC Devices

February 25, 2009 10:46 am | Product Releases | Comments

Innovative Power Products' Model IPP-4011 transforming 90º hybrid coupler combines two signals of up to 300 W CW total output power in GaN MMIC devices with 25 W input and output impedances. The 2.20Ω × 0.80Ω × 0.23Ω drop-in-style-packaged device offers two ports at 50 ? impedance and two ports at 25Ω impedance....

LISTED UNDER: Semiconductors, MMIC

Power Transistors Operate in UHF Applications

February 25, 2009 10:46 am | Product Releases | Comments

HVVi Semiconductors, Inc. announces its Model HVV0405-175 power transistor, using the high voltage vertical field effect transistor architecture for radar applications in the UHF band. Operating across the 420 to 470 MHz band, the device offers UHF system designers a fully qualified 175 W RF power transistor with optimal gain and ruggedness specifications....

LISTED UNDER: Semiconductors, Transistors

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