Advertisement
Semiconductors, Transistors

50 V GaN HEMT Bare Die Family for DC-6 GHz Applications

October 1, 2014 9:33 am | by WDD Staff | Product Releases | Comments

Cree released two new 50 V bare die for 40 and 170 W, which operate up to 6 GHz and are ideal drivers for 50 V IM FETs...

LISTED UNDER: IC | Semiconductors, Transistors

Cree Releases Two New 50 V Broadband GaN HEMTs

August 4, 2014 9:29 am | by WDD Staff | Product Releases | Comments

Cree has released two new unmatched 50V gallium nitride (GaN) high electron mobility transistors (HEMTs) ideal for use in high power broadband amplifier, CW, and pulsed applications...

LISTED UNDER: Amplifiers, Power | Semiconductors, Transistors

Extended Bandwidth GaN HEMT Transistors

July 9, 2014 2:46 pm | by WDD Staff | Product Releases | Comments

As high data rate applications put more strain on LTE wireless networks, innovative solutions such as small cell base stations (BTS) and carrier aggregation will be needed to bridge the bandwidth gap in high traffic areas...

LISTED UNDER: Semiconductors, Transistors
Advertisement

30W GaN Transistors to 3.5GHz

July 9, 2014 2:04 pm | by WDD Staff | Product Releases | Comments

RFMW announced design and sales support for wideband, DC-3.5GHz GaN transistors from TriQuint. Available as the T2G4003532-FS earless package or the T2G4003532-FL, both transistors are input prematched for S-band operation...

LISTED UNDER: Semiconductors, Transistors

New 650 V Normally-Off GaN Transistor Family Announced by GaN Systems

June 23, 2014 9:43 am | by WDD Staff | Product Releases | Comments

GaN Systems Inc. has announced five new normally-off 650 V GaN transistors optimised for high speed system design...

LISTED UNDER: Semiconductors, Transistors

GaN Systems Launches Five New Normally-Off 100 V GaN Transistors

June 23, 2014 9:27 am | by WDD Staff | Product Releases | Comments

GaN Systems has announced a family of normally-off 100 V GaN transistors that spans 20-80 A with very low on resistance...

LISTED UNDER: Semiconductors, Transistors

Cree Introduces New Low Cost, High Power GaN RF Transistors

June 3, 2014 9:36 am | by WDD Staff | Product Releases | Comments

Cree, Inc. introduces a new family of high power GaN RF transistors based on an innovative plastic package design, which leverages the superior RF performance of GaN in a low-cost platform...

LISTED UNDER: Semiconductors, Transistors

High Breakdown Voltages

May 5, 2014 4:48 pm | by WDD Staff | Product Releases | Comments

MACOM has introduced a new GaN on SiC HEMT power transistor for L-Band pulsed radar and communication applications...                  

LISTED UNDER: Power, Other | Semiconductors, Transistors
Advertisement

ON Semiconductor Introduces Efficient Battery Monitors

May 2, 2014 8:42 am | by WDD Staff | Product Releases | Comments

ON Semiconductor has introduced a new family of complementary metal-oxide semiconductor (CMOS) ‘battery fuel gauge’ integrated circuits that provide accurate measurements of the remaining power...

LISTED UNDER: Embedded Systems & Networking | Components, Other | Power, Batteries

Power MOSFETs Offer Fast Switching, Low On-Resistance

March 11, 2014 9:49 pm | by WDD Staff | Product Releases | Comments

Advanced Power Electronics has recently launched new cost-effective N-channel enhancement-mode power MOSFETs offering a fast switching performance and very low on-resistance...

LISTED UNDER: Components, Other | Power, Other | Semiconductors, Transistors

Skyworks’ New High Linearity, Active Bias, Low Noise Amplifier

January 14, 2014 4:27 pm | by WDD Staff | Product Releases | Comments

Skyworks Solutions has introduced a 0.7-1.2 gigahertz, single-die cascode, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) low-noise amplifier (LNA) for cellular infrastructure applications such as tower-mounted amplifiers, remote radio units, repeaters, and base stations...

LISTED UNDER: Low-noise | Semiconductors, Transistors

Freescale Airfast RF Power LDMOS Transistors

January 13, 2014 5:07 pm | by WDD Staff | Product Releases | Comments

Freescale Semiconductor has introduced two new Airfast RF power solutions that cover all major cellular infrastructure bands and deliver industry-leading gain in a compact package. The AFT27S006N is the next-generation follow-on to the popular MW6S004N product – the industry’s workhorse driver deployed broadly in world-class wireless infrastructure installations worldwide...

LISTED UNDER: Semiconductors, Transistors

New AP4034 Family of Power MOSFETs Suit DC-DC Converter Applications

January 13, 2014 4:56 pm | by WDD Staff | Product Releases | Comments

Advanced Power Electronics has introduced the new AP4034 family of 30V N-channel enhancement-mode power MOSFETs in several popular package alternatives to meet differing cost/performance points. All the AP4034 MOSFETs provide fast switching performance and feature a low typical gate charge of 15nC for good switching performance...

LISTED UNDER: Switches, IC | Semiconductors, MMIC | Semiconductors, Transistors

RFMW Offers 285 W GaN Transistors from TriQuint

January 13, 2014 2:17 pm | by WDD Staff | Product Releases | Comments

RFMW has announced design and sales support for TriQuint’s T1G2028536, a 285W GaN transistor available in a low thermal resistance, solder mount package as the T1G2028536–FS or flange mount package as the T1G2028536–FL. Both the –FS and -FL house the transistor in a ceramic NI-780 enclosure...

LISTED UNDER: Semiconductors, Transistors

TriQuint 6 GHz GaN LNA from RFMW

December 24, 2013 10:18 am | by WDD Staff | Product Releases | Comments

RFMW, Ltd. has announced design and sales support for the TGA2611, 2-6GHz LNA utilizing TriQuint’s GaN25 technology. GaN processes provide a highly robust input coupled with low noise figure and high gain...

LISTED UNDER: Embedded Systems & Networking | Transceivers, Satellite | Semiconductors, Transistors

Pages

X
You may login with either your assigned username or your e-mail address.
The password field is case sensitive.
Loading